Dynamics of platicons due to third-order dispersion

Dynamics of platicons caused by the third-order dispersion is studied. It is shown that under the influence of the third-order dispersion platicons obtain angular velocity depending both on dispersion and on detuning value. A method of tuning of platicon associated optical frequency comb repetition rate is proposed.Comment: 11 pages, 5 figure

Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization

We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si $p^+$-$n$-$n^+$ structures. In nonlinear dynamics terms, this mode corresponds to a pulled front propagating into an unstable state in the regime of nonlocalized initial conditions. Before the front starts to travel, field-ehanced emission of electrons from deep-level impurities preionizes initially depleted $n$ base creating spatially nonuniform free carriers profile. Impact ionization takes place in the whole high-field region. We find two ionizing fronts that propagate in opposite directions with velocities up to 10 times higher than the saturated drift velocity.Comment: 3 pages, 4 figure

Platicon Stability in Hot Cavities

The stability of platicons in hot cavities with normal group velocity at the interplay of Kerr and thermal nonlinearities was addressed numerically. The stability analysis was performed for different ranges of pump amplitude, thermal nonlinearity coefficient and thermal relaxation time. It was revealed that for the positive thermal effect, the high-energy wide platicons are stable, while the negative thermal coefficient provides the stability of narrow platicons.Comment: 4 pages, 8 figure

Ultra high-Q WGM microspheres from ZBLAN for the mid-IR band

The advantages of high-quality-factor whispering gallery mode microresonators can be applied to develop novel photonic devices for the mid-IR range. ZBLAN (glass based on heavy metal fluorides) is one of the most promising materials to be used for this purpose due to low optical losses in the mid-IR. We developed original fabrication method based on melting of commercially available ZBLAN-based optical fiber to produce high-Q ZBLAN microspheres with the diameters of 250 to 350 $\mu$m. We effectively excited whispering gallery modes in these microspheres and demonstrated high quality factor both at 1.55 $\mu$m and 2.64 $\mu$m. Intrinsic quality factor at telecom wavelength was shown $(5.4\pm0.4)\cdot10^8$ which is defined by the material losses in ZBLAN. In the mid-IR at 2.64 $\mu$m we demonstrated record quality factor in ZBLAN exceeding $10^8$ which is comparable to the highest values of the Q-factor among all materials in the mid-IR

Theory of superfast fronts of impact ionization in semiconductor structures

We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.Comment: 18 pagers, 10 figure