5,445 research outputs found
Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition
Using uniaxial stress to tune the critical density near that of the sample,
we have studied in detail the low-temperature conductivity of p-type Si:B in
the insulating phase very near the metal-insulator transition. For all values
of temperature and stress, the conductivity collapses onto a single universal
scaling curve. For large values of the argument, the scaling function is well
fit by the exponentially activated form associated with variable range hopping
when electron-electron interactions cause a soft Coulomb gap in the density of
states at the Fermi energy. The temperature dependence of the prefactor,
corresponding to the T-dependence of the critical curve, has been determined
reliably for this system, and is proportional to the square-root of T. We show
explicitly that nevlecting the prefactor leads to substantial errors in the
determination of the scaling parameters and the critical exponents derived from
them. The conductivity is not consistent with Mott variable-range hopping in
the critical region nor does it obey this form for any range of the parameters.
Instead, for smaller argument of the scaling function, the conductivity of Si:B
is well fit by an exponential form with exponent 0.31 related to the critical
exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure
Absence of Conventional Spin-Glass Transition in the Ising Dipolar System LiHo_xY_{1-x}F_4
The magnetic properties of single crystals of LiHo_xY_{1-x}F_4 with x=16.5%
and x=4.5% were recorded down to 35 mK using a micro-SQUID magnetometer. While
this system is considered as the archetypal quantum spin glass, the detailed
analysis of our magnetization data indicates the absence of a phase transition,
not only in a transverse applied magnetic field, but also without field. A
zero-Kelvin phase transition is also unlikely, as the magnetization seems to
follow a non-critical exponential dependence on the temperature. Our analysis
thus unmasks the true, short-ranged nature of the magnetic properties of the
LiHo_xY_{1-x}F_4 system, validating recent theoretical investigations
suggesting the lack of phase transition in this system.Comment: 5 pages, 4 figure
Exchange Monte Carlo Method and Application to Spin Glass Simulations
We propose an efficient Monte Carlo algorithm for simulating a
``hardly-relaxing" system, in which many replicas with different temperatures
are simultaneously simulated and a virtual process exchanging configurations of
these replica is introduced. This exchange process is expected to let the
system at low temperatures escape from a local minimum. By using this algorithm
the three-dimensional Ising spin glass model is studied. The ergodicity
time in this method is found much smaller than that of the multi-canonical
method. In particular the time correlation function almost follows an
exponential decay whose relaxation time is comparable to the ergodicity time at
low temperatures. It suggests that the system relaxes very rapidly through the
exchange process even in the low temperature phase.Comment: 10 pages + uuencoded 5 Postscript figures, REVTe
Steady-state simulations using weighted ensemble path sampling
We extend the weighted ensemble (WE) path sampling method to perform rigorous
statistical sampling for systems at steady state. The straightforward
steady-state implementation of WE is directly practical for simple landscapes,
but not when significant metastable intermediates states are present. We
therefore develop an enhanced WE scheme, building on existing ideas, which
accelerates attainment of steady state in complex systems. We apply both WE
approaches to several model systems confirming their correctness and efficiency
by comparison with brute-force results. The enhanced version is significantly
faster than the brute force and straightforward WE for systems with WE bins
that accurately reflect the reaction coordinate(s). The new WE methods can also
be applied to equilibrium sampling, since equilibrium is a steady state
Dilute electron gas near the metal-insulator transition in two dimensions
In recent years systematic experimental studies of the temperature dependence
of the resistivity in a variety of dilute, ultra clean two dimensional
electron/hole systems have revived the fundamental question of localization or,
alternatively, the existence of a metal-insulator transition in the presence of
strong electron-electron interactions in two dimensions. We argue that under
the extreme conditions of ultra clean systems not only is the electron-electron
interaction very strong but the role of other system specific properties are
also enhanced. In particular, we emphasize the role of valleys in determining
the transport properties of the dilute electron gas in silicon inversion layers
(Si-MOSFETs). It is shown that for a high quality sample the temperature
behavior of the resistivity in the region close to the critical region of the
metal-insulator transition is well described by a renormalization group
analysis of the interplay of interaction and disorder if the electron band is
assumed to have two distinct valleys. The decrease in the resistivity up to
five times has been captured in the correct temperature interval by this
analysis, without involving any adjustable parameters. The considerable
variance in the data obtained from different Si-MOSFET samples is attributed to
the sample dependent scattering rate across the two valleys, presenting thereby
with a possible explanation for the absence of universal behavior in Si-MOSFET
samples of different quality
Water poverty in the northeastern hill region (India): potential alleviation through multiple-use water systems: cross-learnings from Nepal Hills
Water poverty index / Construction / Multiple use / Water storage / Farming systems / Villages / Social aspects / Drip irrigation / India / Nepal / Nagaland / Mon district / Lampong Sheanghah
Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
The magnetic behavior of insulating doped diluted magnetic semiconductors
(DMS) is characterized by the interaction of large collective spins known as
bound magnetic polarons. Experimental measurements of the susceptibility of
these materials have suggested that the polaron-polaron interaction is
ferromagnetic, in contrast to the antiferromagnetic carrier-carrier
interactions that are characteristic of nonmagnetic semiconductors. To explain
this behavior, a model has been developed in which polarons interact via both
the standard direct carrier-carrier exchange interaction (due to virtual
carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due
to the interactions of polarons with magnetic ions in an interstitial region).
Using a variational procedure, the optimal values of the model parameters were
determined as a function of temperature. At temperatures of interest, the
parameters describing polaron-polaron interactions were found to be nearly
temperature-independent. For reasonable values of these constant parameters, we
find that indirect ferromagnetic interactions can dominate the direct
antiferromagnetic interactions and cause the polarons to align. This result
supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure
Spin Waves in Disordered III-V Diluted Magnetic Semiconductors
We propose a new scheme for numerically computing collective-mode spectra for
large-size systems, using a reformulation of the Random Phase Approximation. In
this study, we apply this method to investigate the spectrum and nature of the
spin-waves of a (III,Mn)V Diluted Magnetic Semiconductor. We use an impurity
band picture to describe the interaction of the charge carriers with the local
Mn spins. The spin-wave spectrum is shown to depend sensitively on the
positional disorder of the Mn atoms inside the host semiconductor. Both
localized and extended spin-wave modes are found. Unusual spin and charge
transport is implied.Comment: 14 pages, including 11 figure
Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples
The low-temperature dc conductivities of barely metallic samples of p-type
Si:B are compared for a series of samples with different dopant concentrations,
n, in the absence of stress (cubic symmetry), and for a single sample driven
from the metallic into the insulating phase by uniaxial compression, S. For all
values of temperature and stress, the conductivity of the stressed sample
collapses onto a single universal scaling curve. The scaling fit indicates that
the conductivity of si:B is proportional to the square-root of T in the
critical range. Our data yield a critical conductivity exponent of 1.6,
considerably larger than the value reported in earlier experiments where the
transition was crossed by varying the dopant concentration. The larger exponent
is based on data in a narrow range of stress near the critical value within
which scaling holds. We show explicitly that the temperature dependences of the
conductivity of stressed and unstressed Si:B are different, suggesting that a
direct comparison of the critical behavior and critical exponents for stress-
tuned and concentration-tuned transitions may not be warranted
Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition
Using uniaxial stress to tune Si:B through the metal-insulator transition we
find the conductivity at low temperatures shows an excellent fit to scaling
with temperature and stress on both sides of the transition. The scaling
functions yield the conductivity in the metallic and insulating phases, and
allow a reliable determination of the temperature dependence in the critical
regions on both sides of the transition
- …