Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Geometry of flux attachment in anisotropic fractional quantum Hall states

Fractional quantum Hall (FQH) states are known to possess an internal metric degree of freedom that allows them to minimize their energy when contrasting geometries are present in the problem (e.g., electron band mass and dielectric tensor). We investigate the internal metric of several incompressible FQH states by probing its response to band mass anisotropy using infinite DMRG simulations on a cylinder geometry. We test and apply a method to extract the internal metric of a FQH state from its guiding center structure factor. We find that the response to band mass anisotropy is approximately the same for states in the same Jain sequence, but changes substantially between different sequences. We provide a theoretical explanation of the observed behavior of primary states at filling $\nu = 1/m$ in terms of a minimal microscopic model of flux attachment.Comment: 12 pages including references, 14 figure

Quantum and Classical Glass Transitions in LiHoxY1−xF4Li Ho_x Y_{1-x} F_4

When performed in the proper low field, low frequency limits, measurements of the dynamics and the nonlinear susceptibility in the model Ising magnet in transverse field, $\text{LiHo}_x\text{Y}_{1-x}\text{F}_4$, prove the existence of a spin glass transition for $x$ = 0.167 and 0.198. The classical behavior tracks for the two concentrations, but the behavior in the quantum regime at large transverse fields differs because of the competing effects of quantum entanglement and random fields.Comment: 5 pages, 5 figures. Updated figure 3 with corrected calibration information for thermometr

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure

Disorder driven collapse of the mobility gap and transition to an insulator in fractional quantum Hall effect

We study the nu=1/3 quantum Hall state in presence of the random disorder. We calculate the topologically invariant Chern number, which is the only quantity known at present to unambiguously distinguish between insulating and current carrying states in an interacting system. The mobility gap can be determined numerically this way, which is found to agree with experimental value semiquantitatively. As the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse leading to an insulating phase.Comment: 4 pages with 4 figure

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted

Absence of Conventional Spin-Glass Transition in the Ising Dipolar System LiHo_xY_{1-x}F_4

The magnetic properties of single crystals of LiHo_xY_{1-x}F_4 with x=16.5% and x=4.5% were recorded down to 35 mK using a micro-SQUID magnetometer. While this system is considered as the archetypal quantum spin glass, the detailed analysis of our magnetization data indicates the absence of a phase transition, not only in a transverse applied magnetic field, but also without field. A zero-Kelvin phase transition is also unlikely, as the magnetization seems to follow a non-critical exponential dependence on the temperature. Our analysis thus unmasks the true, short-ranged nature of the magnetic properties of the LiHo_xY_{1-x}F_4 system, validating recent theoretical investigations suggesting the lack of phase transition in this system.Comment: 5 pages, 4 figure

Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Using uniaxial stress to tune Si:B through the metal-insulator transition we find the conductivity at low temperatures shows an excellent fit to scaling with temperature and stress on both sides of the transition. The scaling functions yield the conductivity in the metallic and insulating phases, and allow a reliable determination of the temperature dependence in the critical regions on both sides of the transition

Dilute electron gas near the metal-insulator transition in two dimensions

In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or, alternatively, the existence of a metal-insulator transition in the presence of strong electron-electron interactions in two dimensions. We argue that under the extreme conditions of ultra clean systems not only is the electron-electron interaction very strong but the role of other system specific properties are also enhanced. In particular, we emphasize the role of valleys in determining the transport properties of the dilute electron gas in silicon inversion layers (Si-MOSFETs). It is shown that for a high quality sample the temperature behavior of the resistivity in the region close to the critical region of the metal-insulator transition is well described by a renormalization group analysis of the interplay of interaction and disorder if the electron band is assumed to have two distinct valleys. The decrease in the resistivity up to five times has been captured in the correct temperature interval by this analysis, without involving any adjustable parameters. The considerable variance in the data obtained from different Si-MOSFET samples is attributed to the sample dependent scattering rate across the two valleys, presenting thereby with a possible explanation for the absence of universal behavior in Si-MOSFET samples of different quality

Spin Waves in Disordered III-V Diluted Magnetic Semiconductors

We propose a new scheme for numerically computing collective-mode spectra for large-size systems, using a reformulation of the Random Phase Approximation. In this study, we apply this method to investigate the spectrum and nature of the spin-waves of a (III,Mn)V Diluted Magnetic Semiconductor. We use an impurity band picture to describe the interaction of the charge carriers with the local Mn spins. The spin-wave spectrum is shown to depend sensitively on the positional disorder of the Mn atoms inside the host semiconductor. Both localized and extended spin-wave modes are found. Unusual spin and charge transport is implied.Comment: 14 pages, including 11 figure