Conducting Properties of Planar Irradiated and Pristine Silicon-fullerite-metal Structures

Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found

Growth of carbon nanotubes in etched ion tracks in silicon oxide on silicon

Carbon Nanotubes CNTs were selectively grown in etched ion tracks in SiO2 layers on Si. For this sake, initially Ni catalyst nanocrystals were deposited within the ion tracks by galvanic deposition. The characteristics of plasma enhanced chemical vapor deposition PECVD and thermal chemical vapor deposition TCVD grown CNTs such as structural details and length distribution were investigated. In addition, field emission properties were studied. The analysis revealed that the emerging PECVD grown CNTs were of cylindrical and or conical shape and usually had diameters as large as the etched tracks themselves. The exponential length distribution of these CNTs can be well understood by applying a simple defect growth model. For contrast, many narrow and curled CNTs were found to cluster in spots well separated from each other, after applying TCVD instead of PECVD. The Raman investigations of PECVD grown CNTs showed that Si O C and Si C phases had formed during the growth of the CNTs. These ion track correlated PECVD grown CNTs open the way for the production of novel 3D nanoelectronic devices based on the TEMPOS concept. These structures are also excellent candidates for experiments on channeling in CNTs. Application as field emitting devices, however, appears unfavorable due to poor mean field enhancement factors and insufficient stability

Electronic Conduction Properties of Au/C 60 /p-Si and C 60 /Au/p-Si Sandwich Structures: I-V and Transducer Characteristics

Gold-fullerite [C 60]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C 60/p-Si p-n heterojunction. The turn-on voltage of this p-

Structural Changes of MoS 2 Nano-powder in Dependence on the Annealing Temperature

To search for structural changes of molybdenum disulphide (MoS2) nano-powder under thermal treatment, the annealing of the powder was carried out in vacuum or in argon. MoS2 powder with a grain size of 3-5 nm was synthesized by a chemical method. The temperature of annealing was varied in the range of 380-1000 °C. The time of annealing was varied in the range from 4 h (380 °C) to 5 min (1000 °C). X-ray diffraction and transmission electron microscopy analyses were made to see the character of the change of the crystallization process and the curvature of (002) MoS2 planes. The increase of crystalline phase and the decrease of amorphous phase in the powder appears as a result of the rise of the annealing temperature. The sample annealed at Tann = 380 °C and 500 °C has a small curvature of (002) planes and more enlarged grains in comparison with non-annealed MoS 2 powder. The increase of the annealing temperature to T ann = 700 °C leads to a strong curvature of the (002) planes. The character of the curved planes varies from quite long planes with a large radius of curvature to right-angle-form and U-form structures. The increase of the annealing temperature to Tann = 1000 °C leads to a strong crystallization of the powder and a reduction of the amorphous phase

The Emergence of New Ion Tract Applications

The recent years have brought a renaissance of interest in ion tracks, for the sake of novel applications. This paper summarizes some of the newly emerging possibilities, and the strategies that have been initiated. Only a few applications that are base

Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

Abstract The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized . The basic characteristics of these TEMPOS Tunable Electronic Material with Pores in Oxide on Silicon structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light emitting TEMPOS structures have been produced. About 35 TEMPOS based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip flops, and many others have already been designed and sucessfully tested.Sometimes TEMPOS based circuits are more compact than conventional electronics

Etched Ion Tracks in Silicon Oxide and Silicon Oxynitride as Charge Injection or Extraction Channels for Novel Electronic Structures

The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. German patent pending (May 2003).1 The basic characteristics of these "TEMPOS" (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics