Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy(DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTSmeasurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitialmanganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated.One of the authors T.R. gratefully acknowledges a scholarship of the German Federal Environmental Foundation Deutsche Bundesstiftung Umwelt. Another D.M. is supported by an Australian Research Council QEII Fellowship