Avalanches in a Bose-Einstein condensate

Collisional avalanches are identified to be responsible for an 8-fold increase of the initial loss rate of a large 87-Rb condensate. We show that the collisional opacity of an ultra-cold gas exhibits a critical value. When exceeded, losses due to inelastic collisions are substantially enhanced. Under these circumstances, reaching the hydrodynamic regime in conventional BEC experiments is highly questionable.Comment: 4 pages, 2 figures, 1 tabl

Anharmonic mixing in a magnetic trap

We have experimentally observed re-equilibration of a magnetically trapped cloud of metastable neon atoms after it was put in a non-equilibrium state. Using numerical simulations we show that anharmonic mixing, equilibration due to the collisionless dynamics of atoms in a magnetic trap, is the dominant process in this equilibration. We determine the dependence of its time on trap parameters and atom temperature. Furthermore we observe in the simulations a resonant energy exchange between the radial and axial trap dimensions at a ratio of trap frequencies \omega_r / \omega_z = 3/2. This resonance is explained by a simple oscillator model.Comment: 9 pages, 6 figure

An intense, slow and cold beam of metastable Ne(3s) ^3P_2 atoms

We employ laser cooling to intensify and cool an atomic beam of metastable Ne(3s) atoms. Using several collimators, a slower and a compressor we achieve a ^{20}Ne^* flux of 6 10^{10} atoms/s in an 0.7 mm diameter beam traveling at 100 m/s, and having longitudinal and transverse temperatures of 25mK and 300microK, respectively. This constitutes the highest flux in a concentrated beam achieved to date with metastable rare gas atoms. We characterize the action of the various cooling stages in terms of their influence on the flux, diameter and divergence of the atomic beam. The brightness and brilliance achieved are 2.1 10^{21} s^{-1} m^{-2} sr^{-1} and 5.0 10^{22} s^{-1} m^{-2} sr^{-1}, respectively, comparable to the highest values reported for alkali-metal beams. Bright beams of the ^{21}Ne and ^{22}Ne isotopes have also been created.Comment: 18 pages, 9 figures, RevTe

Silicon etch rate enhancement by traces of metal

We report the effect of nickel and tungsten contamination on the etch behavior of silicon. This is studied in a molecular beam setup, where silicon is etched by XeF2 and Ar+ ions. The etch process is directly monitored by the SiF4 reaction products which leave the surface. The effect of contamination appears very pronounced after the ion beam is switched off: it leads to a temporary enhancement of the spontaneous etch rate on a time scale of 500 s. With traces of contamination on the order of 0.01 ML, the etch rate may be enhanced by a factor of 2 for W and somewhat less for Ni. It is concluded that the contamination moves into the silicon by diffusion to vacancies created by the Ar+ ions. For 1 keV Ar+ ions the contamination moves to a depth of 25 Å, comparable to the penetration depth of the ions. After etching a 170 Å thick layer, the catalytic effect of contamination is reduced to less than 5%. A simple model, which describes the measured effect of contamination very well, indicates that only 3% of the contamination is removed when a monolayer of silicon is etched away. Besides this catalytic effect there are indications that contamination can also lower the etch rate under certain conditions, because of the formation of silicides. From the measurements no conclusions could be drawn about the underlying mechanism of etch rate enhancement. © 1999 American Vacuum Society

Ion-radical synergy in HfO2 etching studied with a XeF2/Ar+ beam setup

To gain more insight into fundamental aspects of the etching behavior of Hf-based high-k materials in plasma etch reactors, HfO2 films were etched in a multiple-beam setup consisting of a low energy Ar+ ion beam and a XeF2 radical beam. The etch rate and etch products were monitored by real-time ellipsometry and mass spectrometry, resp. Although etching of HfO2 in XeF2/Ar+ chem. is mainly a phys. effect, an unambiguous proof of the ion-radical synergistic effect for the etching of HfO2 is presented. The etch yield for 400 eV Ar+ ions at a substrate temp. of 300 DegC was 0.3 atoms/ion for Ar+ sputtering and increased to 2 atoms/ion when XeF2 was also supplied. The etch yield proved to follow the common square root of ion energy dependence both for pure sputtering and radical enhanced etching, with a threshold energy at room temp. of 69+-17 eV for Ar+ ions and 54+-14 eV for Ar+ ions with XeF2

Surface roughness in XeF2 etching of a-Si/c-Si(100)

Single wavelength ellipsometry and at. force microscopy (AFM) were applied in a well-calibrated beam-etching expt. to characterize the dynamics of surface roughening induced by chem. etching of a .apprx.12 nm amorphous Si (a-Si) top layer and the underlying cryst. Si (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF2 flux, we observe a similar evolution of the surface roughness as a function of the XeF2 dose proportional to D(XeF2)b with b~0.2. In the transition region from the pure amorphous to the pure cryst. silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF2)b with b~1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphol. temporarily changes to a structure that suggests a cusp-like shape. The remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 s, with s the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of s which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphol. is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the exptl. etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness. [on SciFinder (R)