Rosa hybrid gene GAPC is mutated in the presence of the Rose Rosette Virus

Rose Rosette Disease (RRD) harms the global rose supply by modification of the growth and development in rose cultivar. RRD spreads via a negative-sense RNA plant virus transmitted by eriophyid mites. Importantly, there is no pre-existing knowledge about the biochemistry by which this virus debilitates roses. Here we implicate glyceraldehyde-3-phosphate dehydrogenase (GAPDH), one of the major metabolic enzymes in plants, as a possible target of the virus. Genomic DNA of the cytosolic form of the protein encoded by GAPC was extracted from both virally-infected and non-infected samples of the Rosa hybrid cultivar Rosa Tropicana. The sequence results provided several distinct differences in the GAPC gene of the non-infected rose compared to the virally-infected rose. Importantly, these modified nucleotide bases resulted in a putative protein sequence containing four unique non-conserved amino acid substitutions in the GAPDH enzyme. This study provides the first evidence of a gene impacted in virally-infected rose plants

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS₂ by Pulsed Metal–Organic Chemical Vapor Deposition

High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor-phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metal–organic chemical vapor deposition (MOCVD) route for MoS₂ film growth in a research-grade single-wafer reactor. Using bis­(<i>tert</i>-butylimido)­bis­(dimethylamido)molybdenum and diethyl disulfide, we deposit MoS₂ films from ∼1 nm to ∼25 nm in thickness on SiO₂/Si substrates. We show that layered 2H-MoS₂ can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO₂/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metal–organic reagents in the controlled synthesis of TMDs