Investigation of Performance Silicon Heterojunction Solar Cells Using a-Si: H or a-SiC: H at Emitter Layer Through AMPS-1D Simulations

We offer a numerical simulation tool, AMPS-1D, which allows to model homo- as well as heterojunction devices. AMPS-1D is the short form of automat for simulation of heterostructures. The program solves the one dimensional semiconductor equations in steady-state. Furthermore, a variety of common characterization techniques have been implemented, current- voltage, external quantum efficiency, conduction and valence band. A user-friendly interface allows to easily perform parameter variations, and to visualize and compare your simulations. In this work, The silicon heterojunction cell performances are investigated by detailed described on external quantum efficiency, and light current-voltage characteristics by recognized simulator AMPS-1D (Analysis of Micro- electronics and Photonic Structures). The objective of this work is to study the correlation between the emitter properties of both heterojunction cells a-Si:H/c-Si and a-SiC:H/c-Si (absorption, defect profiles and energy band offsets) and the carrier collection

2D Numerical Analysis of Metal/Insulator/Thin Film Silicon Systems for TFT’s Applications: Investigation of Active Layer Properties on Quasi-Static Capacitance

Thin Film Transistors (TFTs) are used as pixel switching and driving elements in active matrix liquid crystal displays. High quality of active layer on glass substrates associated with low temperatures is necessary for fabricating high performances and long-term reliable TFTs. According to the deposition conditions at low temperatures, the thin silicon layer presents an inhomogeneous structure that consist of a random superposition of grains of different sizes, where grains boundaries parallels and perpendiculars appear containing a high density of states in the energy forbidden gap. The purpose of this work is to study the impact of granular structure of active layer on the electrical behavior of Metal/Insulator/TFS systems. We have developed a 2D-numerical code based on the resolution of Poisson’s equation. The application of gate bias allows to simulate the quasi-static capacitance characteristic C(VG).The effect of intergranular DOS, interface states and grain size on the quasi-static capacitance is investigated

Abstracts of 1st International Conference on Computational & Applied Physics

This book contains the abstracts of the papers presented at the International Conference on Computational & Applied Physics (ICCAP’2021) Organized by the Surfaces, Interfaces and Thin Films Laboratory (LASICOM), Department of Physics, Faculty of Science, University Saad Dahleb Blida 1, Algeria, held on 26–28 September 2021. The Conference had a variety of Plenary Lectures, Oral sessions, and E-Poster Presentations. Conference Title: 1st International Conference on Computational & Applied PhysicsConference Acronym: ICCAP’2021Conference Date: 26–28 September 2021Conference Location: Online (Virtual Conference)Conference Organizer: Surfaces, Interfaces, and Thin Films Laboratory (LASICOM), Department of Physics, Faculty of Science, University Saad Dahleb Blida 1, Algeria