Thin films of AgIn5(S/Se)8 prepared in a two stage process.

AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value Eg for the films was found to be as the order of 1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of 6.6 9 10-6 (X cm)-1 and thermoelectric power of +18 lV/K

Physical properties of Sb2S3–Cu nanocomposite thin films synthesized by chemical bath deposition and laser ablation of solids in liquids

Cu nanoparticles obtained by laser ablation of solids in liquids have been incorporated into chemical bath solutions to synthesize Sb2S3–Cu nanocomposite thin films. Aqueous colloidal Cu suspensions were added in different volumes to chemical precursor solutions containing Sb and S ions to synthesize Sb2S3 matrices with Cu nanoparticles embedded within them. The obtained films were annealed at 280 °C in Argon. Structural properties of the films were analyzed by means of X-Ray diffraction and Raman spectroscopy, optical properties were determined by UV–Vis spectroscopy and surface morphology was observed by SEM and AFM. Presence of Cu nanoparticles into Sb2S3 was corroborated by TEM measurements. Electrical resistance of the films was studied by electrochemical impedance spectroscopy. Results are discussed as a function of annealing and nominal Cu suspension content in the precursor solutions