The onset of exciton absorption in modulation doped GaAs quantum wells

We study the evolution of the absorption spectrum of a modulation doped GaAs/AlGaAs semiconductor quantum well with decreasing the carrier density. We find that there is a critical density which marks the transition from a Fermi edge singularity to a hydrogen-like behavior. At this density both the lineshape and the transitions energies of the excitons change. We study the density dependence of the singularity exponent $\alpha$ and show that disorder plays an important role in determining the energy scale over which it grows.Comment: 10 pages, 3 figure

Exciton Liquid in Coupled Quantum Wells

Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in GaAs/AlGaAs coupled quantum wells. Above a critical density and below a critical temperature the photogenerated electrons and holes separate into two phases, an electron-hole plasma and an exciton liquid, with a clear sharp boundary between them. The two phases are characterized by distinct photoluminescence spectra and by different electrical conductance. The liquid phase is formed by the repulsive interaction between the dipolar excitons, and exhibits a short range order, which is manifested in the photoluminescence lineshape

The absorption spectrum around nu=1: evidence for a small size Skyrmion

We measure the absorption spectrum of a two-dimensional electron system (2DES) in a GaAs quantum well in the presence of a perpendicular magnetic field. We focus on the absorption spectrum into the lowest Landau Level around nu=1. We find that the spectrum consists of bound electron-hole complexes, trion and exciton like. We show that their oscillator strength is a powerful probe of the 2DES spatial correlations. We find that near nu=1 the 2DES ground state consists of Skyrmions of small size (a few magnetic lengths).Comment: To be published in Phys Rev Lett. To be presented in ICSP2004, Flagstaff, Arizona. 4 figures (1 of them in color). 5 page

Fabrication of Nano-Scale Gaps in Integrated Circuits

Nano-size objects like metal clusters present an ideal system for the study of quantum phenomena and for constructing practical quantum devices. Integrating these small objects in a macroscopic circuit is, however, a difficult task. So far the nanoparticles have been contacted and addressed by highly sophisticated techniques which are not suitable for large scale integration in macroscopic circuits. We present an optical lithography method that allows for the fabrication of a network of electrodes which are separated by gaps of controlled nanometer size. The main idea is to control the gap size with subnanometer precision using a structure grown by molecular beam epitaxy.Comment: 4 pages, 3 figure

The Precautionary Principle (with Application to the Genetic Modification of Organisms)

We present a non-naive version of the Precautionary (PP) that allows us to avoid paranoia and paralysis by confining precaution to specific domains and problems. PP is intended to deal with uncertainty and risk in cases where the absence of evidence and the incompleteness of scientific knowledge carries profound implications and in the presence of risks of "black swans", unforeseen and unforeseable events of extreme consequence. We formalize PP, placing it within the statistical and probabilistic structure of ruin problems, in which a system is at risk of total failure, and in place of risk we use a formal fragility based approach. We make a central distinction between 1) thin and fat tails, 2) Local and systemic risks and place PP in the joint Fat Tails and systemic cases. We discuss the implications for GMOs (compared to Nuclear energy) and show that GMOs represent a public risk of global harm (while harm from nuclear energy is comparatively limited and better characterized). PP should be used to prescribe severe limits on GMOs

Atom Chips: Fabrication and Thermal Properties

Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1$\mu$m. At room temperature, thin wires can carry more than 10$^7$A/cm$^2$ current density and voltages of more than 500V. Extensive test measurements for different substrates and metal thicknesses (up to 5 $\mu$m) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips