Valley-selective energy transfer between quantum dots in atomically thin semiconductors

In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By assuming parabolic confinement for both the electron and the hole, we derive model wave functions for the relative and the center-of-mass motions of electronhole pairs, and investigate theoretically resonant energy transfer among excitons localized in two neighboring quantum dots. We quantify the probability of energy transfer for a direct- gap transition by assuming that the interaction between two quantum dots is described by a Coulomb potential, which allows us to include all relevant multipole terms of the interaction. We demonstrate the structural control of the valley-selective energy transfer between quantum dots

Exciton g-factors in monolayer and bilayer WSe2 from experiment and theory

The optical properties of monolayer and bilayer transition metal dichalcogenide semiconductors are governed by excitons in different spin and valley configurations, providing versatile aspects for van der Waals heterostructures and devices. Here, we present experimental and theoretical studies of exciton energy splittings in external magnetic field in neutral and charged WSe2 monolayer and bilayer crystals embedded in a field effect device for active doping control. We develop theoretical methods to calculate the exciton g-factors from first principles for all possible spin-valley configurations of excitons in monolayer and bilayer WSe2 including valley-indirect excitons. Our theoretical and experimental findings shed light on some of the characteristic photoluminescence peaks observed for monolayer and bilayer WSe2. In more general terms, the theoretical aspects of our work provide additional means for the characterization of single and few-layer transition metal dichalcogenides, as well as their heterostructures, in the presence of external magnetic fields

Level Anticrossing of Impurity States in Semiconductor Nanocrystals

The size dependence of the quantized energies of elementary excitations is an essential feature of quantum nanostructures, underlying most of their applications in science and technology. Here we report on a fundamental property of impurity states in semiconductor nanocrystals that appears to have been overlooked—the anticrossing of energy levels exhibiting different size dependencies. We show that this property is inherent to the energy spectra of charge carriers whose spatial motion is simultaneously affected by the Coulomb potential of the impurity ion and the confining potential of the nanocrystal. The coupling of impurity states, which leads to the anticrossing, can be induced by interactions with elementary excitations residing inside the nanocrystal or an external electromagnetic field. We formulate physical conditions that allow a straightforward interpretation of level anticrossings in the nanocrystal energy spectrum and an accurate estimation of the states\u27 coupling strength

Chiral quantum supercrystals with total dissymmetry of optical response

Since chiral nanoparticles are much smaller than the optical wavelength, their enantiomers show little difference in the interaction with circularly polarized light. This scale mismatch makes the enhancement of enantioselectivity in optical excitation of nanoobjects a fundamental challenge in modern nanophotonics. Here we demonstrate that a strong dissymmetry of optical response from achiral nanoobjects can be achieved through their arrangement into chiral superstructures with the length scale comparable to the optical wavelength. This concept is illustrated by the example of the simple helix supercrystal made of semiconductor quantum dots. We show that this supercrystal almost fully absorbs light with one circular polarization and does not absorb the other. The giant circular dichroism of the supercrystal comes from the formation of chiral bright excitons, which are the optically active collective excitations of the entire supercrystal. Owing to the recent advances in assembly and self-organization of nanocrystals in large superparticle structures, the proposed principle of enantioselectivity enhancement has great potential of benefiting various chiral and analytical methods, which are used in biophysics, chemistry, and pharmaceutical science

Engineering Optical Activity of Semiconductor Nanocrystals via Ion Doping

Controlling the strength of enantioselective interaction of chiral inorganic nanoparticles with circularly polarized light is an intrinsically interesting subject of contemporary nanophotonics. This interaction is relatively weak, because the chirality scale of nanoparticles is much smaller than the optical wavelength. Here we theoretically demonstrate that ion doping provides a powerful tool of engineering and enhances optical activity of semiconductor nanocrystals. We show that by carefully positioning ionic impurities inside the nanocrystals, one can maximize the rotatory strengths of intraband optical transitions, and make them 100 times larger than the typical rotatory strengths of small chiral molecules

Stacking-dependent exciton multiplicity in WSe2_2 bilayers

Twisted layers of atomically thin two-dimensional materials realize a broad range of novel quantum materials with engineered optical and transport phenomena arising from spin and valley degrees of freedom and strong electron correlations in hybridized interlayer bands. Here, we report experimental and theoretical studies of WSe$_2$ homobilayers obtained in two stable configurations of 2H ($60^\circ$ twist) and 3R ($0^\circ$ twist) stackings by controlled chemical vapor synthesis of high-quality large-area crystals. Using optical absorption and photoluminescence spectroscopy at cryogenic temperatures, we uncover marked differences in the optical characteristics of 2H and 3R bilayer WSe$_2$ which we explain on the basis of beyond-DFT theoretical calculations. Our results highlight the role of layer stacking for the spectral multiplicity of momentum-direct intralayer exciton transitions in absorption, and relate the multiplicity of phonon sidebands in the photoluminescence to momentum-indirect excitons with different spin valley and layer character. Our comprehensive study generalizes to other layered homobilayer and heterobilayer semiconductor systems and highlights the role of crystal symmetry and stacking for interlayer hybrid states