An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires

Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump–terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of −8 dB. We achieve an extinction of over 13% and a dynamic range of −9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communicationThe authors thank the EPSRC (U.K.) and Australian Research Council for financial support. H.J.J. thanks the Royal Commission for the Exhibition of 1851 for her research fellowship. The Australian National Fabrication Facility (ACT node) is acknowledged for access to the growth facility used in this work

Modulation of terahertz polarization on picosecond timescales using polymer-encapsulated semiconductor nanowires

We exploit the photoconductivity of semiconductor nanowires to achieve ultrafast broad-bandwidth modulation of THz pulses. A modulation depth of -8 dB was exhibited by a polarizer consisting of 14 layers of nanowires encapsulated in polymer

Choice of Polymer Matrix for a Fast Switchable III-V Nanowire Terahertz Modulator

Progress in ultrafast terahertz (THz) communications has been limited due to the lack of picosecond switchable modulators with sufficient modulation depth. Gallium arsenide nanowires are ideal candidates for THz modulators as they absorb THz radiation, only when photoexcited - giving the potential for picosecend speed switching and high modulation depth. By embedding the nanowires in a polymer matrix and laminating together several nanowire-polymer films, we increase the areal density of nanowires, resulting in greater modulation of THz radiation. In this paper, we compare PDMS and Parylene C polymers for nanowire encapsulation and show that a high modulation depth is possible using Parylene C due to its thinness and its ability to be laminated. We characterize the modulator behavior and switching speed using optical pump-THz probe spectroscopy, and demonstrate a parylene-nanowire THz modulator with 13.5% modulation depth and 1ps switching speed.The authors thank the EPSRC (U.K.) for financial support. H. J. Joyce thanks the Royal Commission for the Exhibition of 1851 for her research fellowship

Semiconductor nanowires in terahertz photonics: From spectroscopy to ultrafast nanowire-based devices

Nanowires show unique promise for a multitude of optoelectronic devices, ranging from solar cells to terahertz (THz) photonic devices. Here, we discuss how THz spectroscopy is guiding the development of such nanowire-based devices. As an example, we focus on developing nanowire-based THz polarization modulators.This project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (grant agreement n° 716471/ERC Starting Grant ACrossWire). The EPSRC and the Australian Research Council are gratefully acknowledged for financial support