Bayesian Sea Ice Detection With the ERS Scatterometer and Sea Ice Backscatter Model at C-Band

This paper describes the adaptation of a Bayesian sea ice detection algorithm for the scatterometer on-board the European Remote Sensing (ERS) satellites (ERS-1 and ERS-2). The algorithm is based on statistics of distances to ocean wind and sea ice geophysical model functions (GMFs) and its performance is validated against coincident active and passive microwave data. We furthermore propose a new model for sea ice backscatter at the C-band in vertical polarization based on the sea ice GMFs derived from ERS and advanced scatterometer data. The model characterizes the dependence of sea ice backscatter on the incidence angle and the sea ice type, allowing a more precise incidence angle correction than afforded by the usual linear transformation. The resulting agreement between the ERS, QuikSCAT, and special sensor microwave imager sea ice extents during the year 2000 is high during the fall and winter seasons, with an estimated ice edge accuracy of about 20 km, but shows persistent biases between scatterometer and radiometer extents during the melting period, with scatterometers being more sensitive to summer (lower concentration and rotten) sea ice types

Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ¿FTMO occurs during the heterojunction formation with the consequent dipole layer enlargement ¿’=¿+¿FTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions.Peer ReviewedPostprint (published version