Reflection of electrons from a domain wall in magnetic nanojunctions

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is calculated in the regime of strong electron reflection from the wall. It is shown that the corresponding magnetoresistance can be large, which is in a qualitative agreement with recent experimental observations. We also calculate the spin current flowing through the wall and the spin polarization of electron gas due to reflections from the domain wall.Comment: 7 pages, 4 figure

Polar Metallocenes

Crystalline polar metallocenes are potentially useful active materials as piezoelectrics, ferroelectrics, and multiferroics. Within density functional theory (DFT), we computed structural properties, energy differences for various phases, molecular configurations, and magnetic states, computed polarizations for different polar crystal structures, and computed dipole moments for the constituent molecules with a Wannier function analysis. Of the systems studied, Mn2(C9H9N)2 is the most promising as a multiferroic material, since the ground state is both polar and ferromagnetic. We found that the predicted crystalline polarizations are 30⁻40% higher than the values that would be obtained from the dipole moments of the isolated constituent molecules, due to the local effects of the self-consistent internal electric field, indicating high polarizabilities