Laser Processing Of Aln/gan Thin Films

A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AlN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AlN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsedlaserannealing at an energydensity of 2000 Rutherford backscattering spectrometryof aMg-implanted (75nm (1.0 thick) thin-film heterostructure showed a 20% reduction of the backscattering yield after laser annealing at an energy density of 400 CL measurements revealed a 410 emission peak indicating the incorporation of after laser processing. Introduction Gallium nitride (GaN) and its solid-solution allovs with and comprise an optoelectronic materials system spanning the to the ultra-violet regime. Developments in GaN growth and doping have resulted in the fabrication of blue light emitting diodes and more recently a blue laser diode As a result, there is significant research interest..