Cluster synchronization in an ensemble of neurons interacting through chemical synapses

In networks of periodically firing spiking neurons that are interconnected with chemical synapses, we analyze cluster state, where an ensemble of neurons are subdivided into a few clusters, in each of which neurons exhibit perfect synchronization. To clarify stability of cluster state, we decompose linear stability of the solution into two types of stabilities: stability of mean state and stabilities of clusters. Computing Floquet matrices for these stabilities, we clarify the total stability of cluster state for any types of neurons and any strength of interactions even if the size of networks is infinitely large. First, we apply this stability analysis to investigating synchronization in the large ensemble of integrate-and-fire (IF) neurons. In one-cluster state we find the change of stability of a cluster, which elucidates that in-phase synchronization of IF neurons occurs with only inhibitory synapses. Then, we investigate entrainment of two clusters of IF neurons with different excitability. IF neurons with fast decaying synapses show the low entrainment capability, which is explained by a pitchfork bifurcation appearing in two-cluster state with change of synapse decay time constant. Second, we analyze one-cluster state of Hodgkin-Huxley (HH) neurons and discuss the difference in synchronization properties between IF neurons and HH neurons.Comment: Notation for Jacobi matrix is changed. Accepted for publication in Phys. Rev.

Consequences of a possible adiabatic transition between \nu=1/3 and \nu=1 quantum Hall states in a narrow wire

We consider the possibility of creating an adiabatic transition through a narrow neck, or point contact, between two different quantized Hall states that have the same number of edge modes, such as \nu=1 and \nu=1/3. We apply both the composite fermion and the Luttinger liquid formalism to analyze the transition. We suggest that using such adiabatic junctions one could build a DC step-up transformer, where the output voltage is higher than the input. Difficulties standing in the way of an experimental implementation of the adiabatic junction are addressed.Comment: 4 pages RevTex, includes 2 eps figures, Submitted to Phys. Rev. Let

Relativistic Hall Effect

We consider the relativistic deformation of quantum waves and mechanical bodies carrying intrinsic angular momentum (AM). When observed in a moving reference frame, the centroid of the object undergoes an AM-dependent transverse shift. This is the relativistic analogue of the spin Hall effect, which occurs in free space without any external fields. Remarkably, the shifts of the geometric and energy centroids differ by a factor of 2, and both centroids are crucial for the correct Lorentz transformations of the AM tensor. We examine manifestations of the relativistic Hall effect in quantum vortices, and mechanical flywheels, and also discuss various fundamental aspects of this phenomenon. The perfect agreement of quantum and relativistic approaches allows applications at strikingly different scales: from elementary spinning particles, through classical light, to rotating black-holes.Comment: 5 pages, 3 figures, to appear in Phys. Rev. Let

Localized matter-waves patterns with attractive interaction in rotating potentials

We consider a two-dimensional (2D) model of a rotating attractive Bose-Einstein condensate (BEC), trapped in an external potential. First, an harmonic potential with the critical strength is considered, which generates quasi-solitons at the lowest Landau level (LLL). We describe a family of the LLL quasi-solitons using both numerical method and a variational approximation (VA), which are in good agreement with each other. We demonstrate that kicking the LLL mode or applying a ramp potential sets it in the Larmor (cyclotron) motion, that can also be accurately modeled by the VA.Comment: 13 pages, 11 figure

Temperature dependence of the conductivity of the electronic crystal

We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature, the electron transport is governed by thermal activation form of $\sigma_{xx}(T)\propto e^{-\Delta_0/k_BT}$. The impurities will localize the electron states along the edges of the crystal domains. At sufficient low temperature, another transport mechanism called Mott's variable range hopping mechanism, similar to that in a disorder insulator takes effect. We show that as the temperature decreases, a crossover from the fixed range hopping of the transport to the variable range hopping of transport in the 2D electron system may be experimentally observed.Comment: 4 pages,1 figure

Structural properties of electrons in quantum dots in high magnetic fields: Crystalline character of cusp states and excitation spectra

The crystalline or liquid character of the downward cusp states in N-electron parabolic quantum dots (QD's) at high magnetic fields is investigated using conditional probability distributions obtained from exact diagonalization. These states are of crystalline character for fractional fillings covering both low and high values, unlike the liquid Jastrow-Laughlin wave functions, but in remarkable agreement with the rotating-Wigner-molecule ones [Phys. Rev. B 66, 115315 (2002)]. The crystalline arrangement consists of concentric polygonal rings that rotate independently of each other, with the electrons on each ring rotating coherently. We show that the rotation stabilizes the Wigner molecule relative to the static one defined by the broken-symmetry unrestricted-Hartree-Fock solution. We discuss the non-rigid behavior of the rotating Wigner molecule and pertinent features of the excitation spectrum, including the occurrence of a gap between the ground and first excited states that underlies the incompressibility of the system. This leads us to conjecture that the rotating crystal (and not the static one) remains the relevant ground state for low fractional fillings even at the thermodynamic limit.Comment: Published version. Typos corrected. REVTEX4. 10 pages with 8 postscript figures (5 in color). For related papers, see http://www.prism.gatech.edu/~ph274cy

Stability of the compressible quantum Hall state around the half-filled Landau level

We study the compressible states in the quantum Hall system using a mean field theory on the von Neumann lattice. In the lowest Landau level, a kinetic energy is generated dynamically from Coulomb interaction. The compressibility of the state is calculated as a function of the filling factor $\nu$ and the width $d$ of the spacer between the charge carrier layer and dopants. The compressibility becomes negative below a critical value of $d$ and the state becomes unstable at $\nu=1/2$. Within a finite range around $\nu=1/2$, the stable compressible state exists above the critical value of $d$.Comment: 4 pages, 4 Postscript figures, RevTe

Spin phase diagram of the nu_e=4/11 composite fermion liquid

Spin polarization of the "second generation" nu_e=4/11 fractional quantum Hall state (corresponding to an incompressible liquid in a one-third-filled composite fermion Landau level) is studied by exact diagonalization. Spin phase diagram is determined for GaAs structures of different width and electron concentration. Transition between the polarized and partially unpolarized states with distinct composite fermion correlations is predicted for realistic parameters.Comment: 5 pages, 3 figure

Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements

Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene transferred on $\textrm{Si/SiO}_{2}$ substrate. From the charge carrier density dependence of the conductivity and from the measurement of the quantum corrections at low magnetic field, we deduce that transport properties in these devices are mainly governed by the Coulomb interaction of carriers with a large concentration of charged impurities. In the QHE regime, at high magnetic field and low temperature ($T<1.3 \textrm{K}$), the Hall resistance is measured by comparison with a GaAs based quantum resistance standard using a cryogenic current comparator. In the low dissipation limit, it is found quantized within 5 parts in $10^{7}$ (one standard deviation, $1 \sigma$) at the expected rational fractions of the von Klitzing constant, respectively $R_{\mathrm{K}}/2$ and $R_{\mathrm{K}}/4$ in the ML and BL devices. These results constitute the most accurate QHE quantization tests to date in monolayer and bilayer exfoliated graphene. It turns out that a main limitation to the quantization accuracy, which is found well above the $10^{-9}$ accuracy usually achieved in GaAs, is the low value of the QHE breakdown current being no more than $1 \mu\mathrm{A}$. The current dependence of the longitudinal conductivity investigated in the BL Hall bar shows that dissipation occurs through quasi-elastic inter-Landau level scattering, assisted by large local electric fields. We propose that charged impurities are responsible for an enhancement of such inter-Landau level transition rate and cause small breakdown currents.Comment: 14 pages, 9 figure

Spin-Wave Theory of the Spiral Phase of the t-J Model

A graded H.P,realization of the SU(2|1) algebra is proposed.A spin-wave theory with a condition that the sublattice magnetization is zero is discussed.The long-range spiral phase is investigated.The spin-spin correlator is calculated.Comment: 17 page