STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods. The paper provides a comparative analysis of the advantages of bipolar static induction transistor compared to the bipolar power transistors, MOSFETs and insulated-gate bipolar transistor (IGBT). Considered are structural and technological parameters that influence the resistance of BSIT-transistor.Result. As a result of experimental study on silicon substrates were formed test prototypes of BSIT transistor structure, are presented calculation and experimental works. Obtained are the resistance dependencies of the transistor cell on the thickness of the epitaxial film; the resistance dependencies of BSIT transistor cell on the effective gate length for different values of the impurity concentration in the epitaxial film; dependencies resistance of the transistor cell on the gate length at different values of the epitaxial film thickness; the resistance dependencies of BSIT transistor cell on the distance between the mask for the p-region and the gate; dependencies on the multiplication the cell resistance by its area on the gate length.Conclusion. When increasing the gate length (Lk) and the mask length for the p-region (lp +) in the transistor structure, the resistance decreases and the dependence of multiplication of the cell resistance by its area Q on the gate length has this case the minimum

Исследование параметров, влияющих на пробивное напряжение биполярного транзистора со статической индукцией

The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transistor configurations in order to improve the instrument output characteristics and reliability. One of the key electrical parameters characterizing this instrument is breakdown voltage. In p-n junction at specific value of reverse bias the breakdown effect is present that appears as sharp increase of reverse current in p-n junction. For thermal breakdown to occur the thermal self-heating of the structure is necessary. It takes place in case of considerable reverse current in p-n junction. Typically, thermal breakdown happens after tunnel or avalanche breakdown of p-n junction. Breakdown voltage of real diffused p-n junction is defined by value of avalanche breakdown voltage of spherical part of the junction. Thus, breakdown voltage of p-n of junction strongly depends on its geometry.Исследуется структура биполярного транзистора со статической индукцией (БСИТ). Рассмотрены конструктивно-технологические параметры, влияющие на пробивное напряжение ячейки БСИТ. Исследованы и получены зависимости пробивного напряжения от геометрии прибора

Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits

The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of the phosphorus diffusion using solid planar source allow to get the transistors with improved electrophysical parameters

THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP

Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plasma anodizing or oxidation

Study of Parameters Affecting Breakdown Voltage of Bipolar Static Induction Transistor

The article considers structural and technological parameters affecting breakdown voltage of a BSIT transistor cell. The main objective of the scientific research in that field is optimization of manufacturing techniques of power electronics transistor configurations in order to improve the instrument output characteristics and reliability. One of the key electrical parameters characterizing this instrument is breakdown voltage. In p-n junction at specific value of reverse bias the breakdown effect is present that appears as sharp increase of reverse current in p-n junction. For thermal breakdown to occur the thermal self-heating of the structure is necessary. It takes place in case of considerable reverse current in p-n junction. Typically, thermal breakdown happens after tunnel or avalanche breakdown of p-n junction. Breakdown voltage of real diffused p-n junction is defined by value of avalanche breakdown voltage of spherical part of the junction. Thus, breakdown voltage of p-n of junction strongly depends on its geometry

COMPUTER SIMULATION OF DETERMINING SILTATION VOLUMES OF WATER RESERVOIR STORAGE ON THE AKSAY RIVER

Objectives. The development of a mathematical model for the increased turbidity zones of the Aksay river in order to determine the siltation volumes of the Aksay water reservoir storage.Method. The mathematical model is developed using the theory of probability and the theory of random process outliers. The model takes the normal distribution of the horizontal and vertical components of the instantaneous flow velocities into account, as well as the Rayleigh law of the distribution of their maxima. The proposed model is used to calculate the “turbidity tail” of the Aksay river.Result. Due to the multifactorial nature of the continuously associated processes of siltation and deposition of suspended and bottom sediments in the upper pounds of the Aksay reservoir storage hydrological system, a mathematical model of the reservoir accretion process is developed. This model provides the reliability of accretion forecasting with spatial and temporal correlation with the siltation process model, which is actually feasible on the basis of computer simulation.Conclusion. The developed model, which is based on a probabilistic approach and the theory of random process outliers, reflects the overall process of sediment transport in open channels. The development and execution of simulation programmes is carried out using the Microsoft Developer Studio (MDS) and the Fortran Power Station algorithmic language, which comprises not only a programming system, but also a set of tools for supporting large software projects integrated into MDS

TECHNOLOGY OF MANUFACTURING OF TRANSISTOR STRUCTURES POWER ELECTRONICS

It is proved that a prospective direction of electronic power development are intelligent power components: integrated power ICS and modules. Power electronic devices in the field of switched currents up to 50 A are arranged. The results of the semiconductor structures manufacturing technology study, field effect transistor type KP 961 are summarized. The manufacturing technology optimization problem of the transistor structures for power electronics to improve the output characteristics and reliability of the device has been solved. Special attention is paid to the reliability increasing methods, stability and durability of transistors in various modes and operating conditions. To improve the technology some computational model for the stock and the sealing areas formation have been obtained as well as experimental studies have been carried out. Optimised process stages of the transistor structure formation have been proposed. The charts on the structures of transistors grown at the given technology have been made. The manufacturing technology route structure of a field effect transistor of the KP 961 type has been developed

RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE

The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices. Delivered and processed to obtain the solution of the smoothed microrelief contact windows in SiO2 other materials. The solution of the problem is closely connected with the problem of an isotropic plasma chemical etching, when the rate of lateral (horizontal) equal to the speed of the vertical etching, which allows to obtain smooth wall structures with maximum care dimensions on the border with photoresist or other masking coating