Nonlinear stability of <i>E</i> centers in Si_1-<i>x</i>Ge_<i>x</i>: electronic structure calculations

Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms (E centers) in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results

Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

In germanium, donor atoms migrate or form larger immobile clusters via their interaction with lattice vacancies. By engineering the concentration of free vacancies, it is possible to control the diffusion of the donor atoms and the formation of those larger clusters that lead to the deactivation of a significant proportion of the donor atoms. Electronic structure calculations in conjunction with mass action analysis are used to predict the concentrations of free vacancies and deactivated donor atoms in germanium doped with different proportions of arsenic and phosphorous. We find, for example, that at low temperatures, the concentration of free vacancies is partially suppressed by increasing the proportion of arsenic doping, whereas at high temperatures (above 1000 K), the concentration of free vacancies is relatively constant irrespective of the donor species. It is predicted that the free vacancy and active donor concentrations vary linearly with the arsenic to phosphorous ratio across a wide range of temperatures

Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes

Electronic structure calculations are used to study the stability, concentration, and migration of vacancy-donor (phosphorus, arsenic, and antimony) complexes in germanium, in the presence of carbon. The association of carbon with mobile vacancy-donor pairs can lead to energetically favorable and relatively immobile complexes. It is predicted that the complexes formed between lattice vacancies, carbon, and antimony substitutional atoms are more stable and less mobile compared to complexes composed of vacancies, carbon, and phosphorus or arsenic atoms. Then, with the use of mass action analysis, the relative concentrations of the most important complexes are calculated, which depend also on their relative stability not just their absolute stability. Overall, the theoretical predictions are consistent with experimental results, which determined that the diffusion of vacancy-donor defects is retarded in the presence of carbon, especially in samples with a high concentration of carbon. In addition, the calculations provide information on the structure and the equilibrium concentration of the most important complexes and details of their association energies

Radiation damage tolerant nanomaterials

Designing a material from the atomic level to achieve a tailored response in extreme conditions is a grand challenge in materials research. Nanostructured metals and composites provide a path to this goal because they contain interfaces that attract, absorb and annihilate point and line defects. These interfaces recover and control defects produced in materials subjected to extremes of displacement damage, impurity implantation, stress and temperature. Controlling radiation-induced-defects via interfaces is shown to be the key factor in reducing the damage and imparting stability in certain nanomaterials under conditions where bulk materials exhibit void swelling and/or embrittlement. We review the recovery of radiation-induced point defects at free surfaces and grain boundaries and stabilization of helium bubbles at interphase boundaries and present an approach for processing bulk nanocomposites containing interfaces that are stable under irradiation.United States. Dept. of Energy. Office of Basic Energy Sciences (Award 2008LANL1026

Vacancy-mediated dopant diffusion activation enthalpies for germanium

Electronic structure calculations are used to predict the activation enthalpies of diffusion for a range of impurity atoms (aluminium, gallium, indium, silicon, tin, phosphorus, arsenic, and antimony) in germanium. Consistent with experimental studies, all the impurity atoms considered diffuse via their interaction with vacancies. Overall, the calculated diffusion activation enthalpies are in good agreement with the experimental results, with the exception of indium, where the most recent experimental study suggests a significantly higher activation enthalpy. Here, we predict that indium diffuses with an activation enthalpy of 2.79 eV, essentially the same as the value determined by early radiotracer studies

Method for long time scale simulations of solids: Application to crystal growth and dopant clustering

An important challenge in theoretical chemistry is the time scale problem. Atomic motion can be simulated directly by integrating Newton's equations over a time scale of nanoseconds, but most interesting chemical reactions take place on a time scale of seconds. We have developed a methodology to bridge this time scale gap using harmonic transition state theory suitable for solid systems. Possible reactive events and their rates are found with a saddle point finding method called the dimer method. When enough events are found, a kinetic Monte Carlo algorithm is used to choose which event occurs so that the system's position can be advanced in time. This technique has two major advantages over traditional kinetic Monte Carlo -- atoms do not have to map onto lattice sites for classification and kinetic events can be arbitrarily complicated. We have studied the homoepitaxial growth of aluminum and copper using an EAM potential at 80K with experimentally relevant deposition rates of monolayers per minute using a multiple time scale approach. Atomic deposition events are simulated directly with classical dynamics for several picoseconds until the incident energy has dissipated, and the long time between deposition events is simulated with the adaptive kinetic Monte Carlo method. Our simulations indicate that the Al( 100) surface grows much smoother then Cu( 100) at temperature between 0 and 80K due in part to long range multi atom processes which enable aluminum atoms to easily descend from atop islands. The high rate of such processes is due to their low activation energy, which is supported by density functional theory calculations, and the trend that processes involving more atoms tend to have larger prefactors and be favored by entropy. The scheme is efficient enough to model the evolution of systems with ab-initio forces as well, for which I will show an example of the breakup of dopant clusters in silicon

Layered Atom Arrangements in Complex Materials

In this report, we develop an atom layer stacking model to describe systematically the crystal structures of complex materials. To illustrate the concepts, we consider a sequence of oxide compounds in which the metal cations progress in oxidation state from monovalent (M{sup 1+}) to tetravalent (M{sup 4+}). We use concepts relating to geometric subdivisions of a triangular atom net to describe the layered atom patterns in these compounds (concepts originally proposed by Shuichi Iida). We demonstrate that as a function of increasing oxidation state (from M{sup 1+} to M{sup 4+}), the layer stacking motifs used to generate each successive structure (specifically, motifs along a 3 symmetry axis), progress through the following sequence: MMO, MO, M{sub r}O, MO{sub r/s}O{sub u/v}, MOO (where M and O represent fully dense triangular atom nets and r/s and u/v are fractions used to describe partially filled triangular atom nets). We also develop complete crystallographic descriptions for the compounds in our oxidation sequence using trigonal space group R{bar 3}

Effect of defects on reaction of NiO surface with Pb-contained solution

In order to understand the role of defects in chemical reactions, we used two types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate as the defect free NiO prototype and NiO grown on Ni(110) single crystal as the one with defects. In-situ observations for oxide-liquid interfacial structure and surface morphology were performed for both samples in water and Pb-contained solution using high-resolution X-ray reflectivity and atomic force microscopy. For the MBE grown NiO, no significant changes were detected in the high-resolution X-ray reflectivity data with monotonic increase in roughness. Meanwhile, in the case of native grown NiO on Ni(110), significant changes in both the morphology and atomistic structure at the interface were observed when immersed in water and Pb-contained solution. Our results provide simple and direct experimental evidence of the role of the defects in chemical reaction of oxide surfaces with both water and Pb-contained solution.ope

Prediction of Irradiation Spectrum Effects in Pyrochlores

The final publication is available at Springer via http://dx.doi.org/10.1007/s11837-014-1158-xThe formation energy of cation antisites in pyrochlores (A2B2O7) has been correlated with the susceptibility to amorphize under irradiation, and thus, density functional theory calculations of antisite energetics can provide insights into the radiation tolerance of pyrochlores. Here, we show that the formation energy of antisite pairs in titanate pyrochlores, as opposed to other families of pyrochlores (B = Zr, Hf, or Sn), exhibits a strong dependence on the separation distance between the antisites. Classical molecular dynamics simulations of collision cascades in Er2Ti2O7 show that the average separation of antisite pairs is a function of the primary knock-on atom energy that creates the collision cascades. Together, these results suggest that the radiation tolerance of titanate pyrochlores may be sensitive to the irradiation conditions and might be controllable via the appropriate selection of ion beam parameters