Cooperative localization-delocalization in the high Tc cuprates

The intrinsic metastable crystal structure of the cuprates results in local dynamical lattice instabilities, strongly coupled to the density fluctuations of the charge carriers. They acquire in this way simultaneously both, delocalized and localized features. It is responsible for a partial fractioning of the Fermi surface, i.e., the Fermi surface gets hidden in a region around the anti-nodal points, because of the opening of a pseudogap in the normal state, arising from a partial charge localization. The high energy localized single-particle features are a result of a segregation of the homogeneous crystal structure into checker-board local nano-size structures, which breaks the local translational and rotational symmetry. The pairing in such a system is dynamical rather than static, whereby charge carriers get momentarily trapped into pairs in a deformable dynamically fluctuating ligand environment. We conclude that the intrinsically heterogeneous structure of the cuprates must play an important role in this type of superconductivity.Comment: 14 pages, 8 figures, Proceedings of the "International Conference on Condensed Matter Theories", Quito, 2009 Int. J. Mod. Phys. B 2010 (Accepted

Spin singlet small bipolarons in Nb-doped BaTiO3

The magnetic susceptibility and electrical resistivity of n-type BaTi{1-x}Nb{x}O3 have been measured over a wide temperature range. It is found that, for 0 < x < 0.2, dopant electrons form immobile spin singlet small bipolarons with binding energy around 110 meV. For x = 0.2, a maximum in the electrical resistivity around 15 K indicates a crossover from band to hopping transport of the charge carriers, a phenomenon expected but rarely observed in real polaronic systems.Comment: 5 pages, 4 figure

Improved Thermoelectric Cooling Based on the Thomson Effect

Traditional thermoelectric Peltier coolers exhibit a cooling limit which is primarily determined by the figure of merit, zT. Rather than a fundamental thermodynamic limit, this bound can be traced to the difficulty of maintaining thermoelectric compatibility. Self-compatibility locally maximizes the cooler's coefficient of performance for a given zT and can be achieved by adjusting the relative ratio of the thermoelectric transport properties that make up zT. In this study, we investigate the theoretical performance of thermoelectric coolers that maintain self-compatibility across the device. We find such a device behaves very differently from a Peltier cooler, and term self-compatible coolers "Thomson coolers" when the Fourier heat divergence is dominated by the Thomson, as opposed to the Joule, term. A Thomson cooler requires an exponentially rising Seebeck coefficient with increasing temperature, while traditional Peltier coolers, such as those used commercially, have comparatively minimal change in Seebeck coefficient with temperature. When reasonable material property bounds are placed on the thermoelectric leg, the Thomson cooler is predicted to achieve approximately twice the maximum temperature drop of a traditional Peltier cooler with equivalent figure of merit (zT). We anticipate the development of Thomson coolers will ultimately lead to solid state cooling to cryogenic temperatures.Comment: The Manuscript has been revised for publication in PR

Enhanced superconducting pairing interaction in indium-doped tin telluride

The ferroelectric degenerate semiconductor Sn$_{1-\delta}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $= 1.7(3)$ indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for $x > x_c$ than for $x < x_c$. By examining the effect of In dopant atoms on both $T_c$ and the temperature of the ferroelectric structural phase transition, $T_{SPT}$, we show that phonon modes related to this transition are not responsible for this $T_c$ enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.Comment: 7 page

Determination of the Predominant Ionization and Loss Mechanisms for the Low‐Voltage Arc Mode in a Neon Plasma Diode

A reaction‐rate analysis is used to determine the relative importance of the predominant ionization and loss mechanisms in a neon low‐voltage arc. Experimental data are derived from various experiments to determine density, cross section, etc. It is found that the resonance and metastable state atoms are primarily generated in a region near the cathode which corresponds to the ``cathode ball‐of‐fire'' region of the low‐voltage arc. The predominant ion‐generation process is found to be a result of collisions between excited atoms which cause the formation of a molecular ion. Direct ionization of ground‐state atoms is of secondary but non‐negligible, importance. Consideration of quasi‐equilibrium multistage ionization shows that, unlike the cesium low‐voltage arc, it is unimportant in the neon low‐voltage arc. The escape of resonance radiation accounts for approximately one‐fifth of the total power loss while ionization accounts for approximately one‐eighth. Most of the remaining power loss appears as power dissipation at the anode.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69978/2/JAPIAU-39-9-4299-1.pd