Influence of atomic mixing and preferential sputtering on depth profiles and interfaces

Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sectioning to measure the composition of metal–semiconductor interfaces. Experimental evidence obtained with the Pt–Si system is used to demonstrate ion‐induced atomic mixing and then its effect on sputter etching and depth profiling. Starting with discrete layer structures, a relatively low ion dose (≳3×10^(15) cm^(−2)) first produced a mixed surface layer with thickness comparable to the ion range. Higher ion doses then result in successive sputter etching and continual atomic mixing over a constant surface layer thickness. A model is developed that is based on a sputter removal (including preferential sputtering) of atoms at the surface and a uniform mixing of atoms over a constant thickness. The model predicts the influences of atomic mixing and preferential sputtering on the depth profiling of thin‐film structures and interfaces

Random Bit Multilevel Algorithms for Stochastic Differential Equations

We study the approximation of expectations \E(f(X)) for solutions $X$ of SDEs and functionals $f \colon C([0,1],\R^r) \to \R$ by means of restricted Monte Carlo algorithms that may only use random bits instead of random numbers. We consider the worst case setting for functionals $f$ from the Lipschitz class w.r.t.\ the supremum norm. We construct a random bit multilevel Euler algorithm and establish upper bounds for its error and cost. Furthermore, we derive matching lower bounds, up to a logarithmic factor, that are valid for all random bit Monte Carlo algorithms, and we show that, for the given quadrature problem, random bit Monte Carlo algorithms are at least almost as powerful as general randomized algorithms

Random Bit Quadrature and Approximation of Distributions on Hilbert Spaces

We study the approximation of expectations \E(f(X)) for Gaussian random elements $X$ with values in a separable Hilbert space $H$ and Lipschitz continuous functionals $f \colon H \to \R$. We consider restricted Monte Carlo algorithms, which may only use random bits instead of random numbers. We determine the asymptotics (in some cases sharp up to multiplicative constants, in the other cases sharp up to logarithmic factors) of the corresponding $n$-th minimal error in terms of the decay of the eigenvalues of the covariance operator of $X$. It turns out that, within the margins from above, restricted Monte Carlo algorithms are not inferior to arbitrary Monte Carlo algorithms, and suitable random bit multilevel algorithms are optimal. The analysis of this problem leads to a variant of the quantization problem, namely, the optimal approximation of probability measures on $H$ by uniform distributions supported by a given, finite number of points. We determine the asymptotics (up to multiplicative constants) of the error of the best approximation for the one-dimensional standard normal distribution, for Gaussian measures as above, and for scalar autonomous SDEs

Evaluation of the potential for dissolved oxygen ingress into deep sedimentary basins during a glaciation event

Geochemical conditions in intracratonic sedimentary basins are currently reducing, even at relatively shallow depths. However, during glaciation-deglaciation events, glacial meltwater production may result in enhanced recharge (Bea et al., 2011; and Bea et al., 2016) potentially having high concentrations of dissolved oxygen (O2). In this study, the reactive transport code Par-MIN3PTHCm was used to perform an informed, illustrative set of simulations assessing the depth of penetration of low salinity, O2-rich, subglacial recharge. Simulation results indicate that the large-scale basin hydrostratigraphy, in combination with the presence of dense brines at depth, results in low groundwater velocities during glacial meltwater infiltration, restricting the vertical ingress of dilute recharge waters. Furthermore, several geochemical attenuation mechanisms exist for O2, which is consumed by reactions with reduced mineral phases and solid organic matter (SOM). The modeling showed that effective oxidative mineral dissolution rates and SOMoxidation rates between 5 × 10-15 and 6 × 10-13 mol dm-3 bulk s-1 were sufficient to restrict the depth of O2 ingress to less than 200m.These effective rates are low and thus conservative, in comparison to rates reported in the literature. Additional simulations with more realistic, yet still conservative, parameters reaffirm the limited ability for O2 to penetrate into sedimentary basin rocks during a glaciation-deglaciation event.Fil: Bea, Sergio Andrés. Universidad Nacional del Centro de la Provincia de Buenos Aires. Rectorado. Instituto de Hidrología de Llanuras - Sede Tandil. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Instituto de Hidrología de Llanuras - Sede Tandil; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Su, Danyang. University of British Columbia; CanadáFil: Mayer, Klaus Ulrich. University of British Columbia; CanadáFil: MacQuarrie, T. B.. University of New Brunswick; Canad

Sequence of phase formation in planar metal-Si reaction couples

A correlation is found between the sequence of phase formation in thin-film metal-Si interactions and the bulk equilibrium phase diagram. After formation of the first silicide phase, which generally follows the rule proposed by Walser and Bené, the next phase formed at the interface between the first phase and the remaining element (Si or metal) is the nearest congruently melting compound richer in the unreacted element. If the compounds between the first phase and the remaining element are all noncongruently melting compounds (such as peritectic or peritectoid phases), the next phase formed is that with the smallest temperature difference between the liquidus curve and the peritectic (or peritectoid) point