2 research outputs found
Phonon drag thermopower and weak localization
Previous experimental work on a two-dimensional (2D) electron gas in a
Si-on-sapphire device led to the conclusion that both conductivity and phonon
drag thermopower are affected to the same relative extent by weak
localization. The present paper presents further experimental and theoretical
results on these transport coefficients for two very low mobility 2D electron
gases in doped GaAs/GaAlAs quantum wells. The experiments
were carried out in the temperature range 3-7K where phonon drag dominates the
thermopower and, contrary to the previous work, the changes observed in the
thermopower due to weak localization were found to be an order of magnitude
less than those in the conductivity. A theoretical framework for phonon drag
thermopower in 2D and 3D semiconductors is presented which accounts for this
insensitivity of to weak localization. It also provides transparent
physical explanations of many previous experimental and theoretical results.Comment: 19 page Revtex file, 3 Postscript figur