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    Generalized stacking fault energetics and dislocation properties: compact vs. spread unit dislocation structures in TiAl and CuAu

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    We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab-initio generalized stacking fault energetics (ie., the so-called γ\gamma-surface). The approach is used to investigate dislocations in L10_{0} TiAl and CuAu; predicted differences in the unit dislocation properties are explicitly related with features of the γ\gamma-surface geometry. A unified description of compact, spread and split dislocation cores is provided with an important characteristic "dissociation path" revealed by this highly tractable scheme.Comment: 7 two columns pages, 2 eps figures. Phys. Rev. B. accepted November 199
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