44 research outputs found

    Time Dependent Development of the Coulomb Gap

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    We show that the time development of the Coulomb gap in a Coulomb glass can involve very long relaxation times due to electron rearrangement and hopping. We find that an applied magnetic field reduces the rate of electron hopping and, hence, Coulomb gap formation. These results are consistent with recent conductance experiments on thin semiconducting and metallic films.Comment: 4 pages, Latex, 3 encapsulated postscript figure

    Universal temperature dependence of the conductivity of a strongly disordered granular metal

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    A disordered array of metal grains with large and random intergrain conductances is studied within the one-loop accuracy renormalization group approach. While at low level of disorder the dependence of conductivity on log T is nonuniversal (it depends on details of the array's geometry), for strong disorder this dependence is described by a universal nonlinear function, which depends only on the array's dimensionality. In two dimensions this function is found numerically. The dimensional crossover in granular films is discussed.Comment: 6 pages, 6 figures, submitted to JETP Letter

    Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier

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    We report magnetoresistance measurements of ramp type superconductor-normal-superconductor (SNS) junctions. The junctions consist of underdoped YBa2Cu3OyYBa_{2}Cu_{3}O_y (YBCO) electrodes separated by a barrier of YBa2Cu2.6Ga0.4OyYBa_{2}Cu_{2.6}Ga_{0.4}O_y. We observe a large positive magnetoresistance, linear in the field. We suggest that this unusual magnetoresistance originates in the field dependence of the proximity effect. Our results indicate that in underdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibit the anomalously long range found in optimally doped YBCO structures. From our data we obtain the diffusion coefficient and relaxation time of quasiparticles in underdoped YBCO.Comment: 5 figures, accepted for publication in Physical Review
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