6,079 research outputs found
Ge growth on ion-irradiated Si self-affine fractal surfaces
We have carried out scanning tunneling microscopy experiments under ultrahigh
vacuum condition to study the morphology of ultrathin Ge films eposited on
pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The
pristine and the ion-irradiated Si(100) surface have roughness exponents of
alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were
carried out on two halves of the same sample where only one half was
ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness
exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge
deposition, while the roughness increases by more than an order of magnitude on
the pristine surface, a smoothing is observed for the ion-irradiated surface.
For the ion-irradiated surface the correlation length xi increases from 32 nm
to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov
or layer-plus-island mode where islands grow on a wetting layer of about three
atomic layers. On the pristine surface the islands are predominantly of square
or rectangular shape, while on the ion-irradiated surface the islands are
nearly diamond shaped. Changes of adsorption behaviour of deposited atoms
depending on the roughness exponent (or the fractal dimension) of the substrate
surface are discussed.Comment: 5 pages, 2 figures and 1 tabl
Resolution of two apparent paradoxes concerning quantum oscillations in underdoped high- superconductors
Recent quantum oscillation experiments in underdoped high temperature
superconductors seem to imply two paradoxes. The first paradox concerns the
apparent non-existence of the signature of the electron pockets in angle
resolved photoemission spectroscopy (ARPES). The second paradox is a clear
signature of a small electron pocket in quantum oscillation experiments, but no
evidence as yet of the corresponding hole pockets of approximately double the
frequency of the electron pocket. This hole pockets should be present if the
Fermi surface reconstruction is due to a commensurate density wave, assuming
that Luttinger sum rule relating the area of the pockets and the total number
of charge carriers holds. Here we provide possible resolutions of these
apparent paradoxes from the commensurate -density wave theory. To address
the first paradox we have computed the ARPES spectral function subject to
correlated disorder, natural to a class of experiments relevant to the
materials studied in quantum oscillations. The intensity of the spectral
function is significantly reduced for the electron pockets for an intermediate
range of disorder correlation length, and typically less than half the hole
pocket is visible, mimicking Fermi arcs. Next we show from an exact transfer
matrix calculation of the Shubnikov-de Haas oscillation that the usual disorder
affects the electron pocket more significantly than the hole pocket. However,
when, in addition, the scattering from vortices in the mixed state is included,
it wipes out the frequency corresponding to the hole pocket. Thus, if we are
correct, it will be necessary to do measurements at higher magnetic fields and
even higher quality samples to recover the hole pocket frequency.Comment: Accepted version, Phys. Rev. B, brief clarifying comments and updated
reference
Dissipation and criticality in the lowest Landau level of graphene
The lowest Landau level of graphene is studied numerically by considering a
tight-binding Hamiltonian with disorder. The Hall conductance
and the longitudinal conductance are
computed. We demonstrate that bond disorder can produce a plateau-like feature
centered at , while the longitudinal conductance is nonzero in the same
region, reflecting a band of extended states between , whose
magnitude depends on the disorder strength. The critical exponent corresponding
to the localization length at the edges of this band is found to be . When both bond disorder and a finite mass term exist the localization
length exponent varies continuously between and .Comment: 4 pages, 5 figure
Multiferroic coupling in nanoscale BiFeO3
Using the results of x-ray and neutron diffraction experiments, we show that
the ferroelectric polarization, in ~22 nm particles of BiFeO3, exhibits a jump
by ~30% around the magnetic transition point T_N (~635 K) and a suppression by
~7% under 5T magnetic field at room temperature (<<T_N). These results confirm
presence of strong multiferroic coupling even in nanoscale BiFeO3 and thus
could prove to be quite useful for applications based on nanosized devices of
BiFeO3.Comment: 4 pages including 4 figures and supplementary data; accepted for
publication in Appl. Phys. Let
The challenge of weather prediction: What makes it difficult? 3. Old and new ways of weather prediction
This article does not have an abstract
The challenge of weather prediction 1. The basic driving
This article does not have an abstract
A homomorphism theorem and a Trotter product formula for quantum stochastic flows with unbounded coefficients
We give a new method for proving the homomorphic property of a quantum
stochastic ow satisfying a quantum stochastic differential equation with
unbounded coefficients, under some further hypotheses. As an application, we
prove a Trotter product formula for quantum stochastic ows and obtain quantum
stochastic dilations of a class of quantum dynamical semigroups generalizing
results of [5
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