Spectroscopie TeraHertz dédiée à la Caractérisation Diélectrique de Matériaux d’encapsulation de composants électroniques hautes fréquences

International audienc

Spectroscopie TeraHertz dédiée à la Caractérisation Diélectrique de Matériaux d’encapsulation de composants électroniques hautes fréquences

International audienc

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

International audienceIn this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical properties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

International audienc

Orientation control of Platinum electrode grown on silicon using [Ca2Nb3O10]− nanosheets as seed layer.

International audiencePlatinum (Pt) is a noble metal with low resistivity and resilience to oxidation, which is largely used in microelectronic devices. In order to facilitate the integration of Pt thin films on silicon substrate, we are showing the ability to control their orientation by using [Ca2Nb3O10]− nanosheets (CNOns) as seed layer. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO2/Si), and on TiO2/SiO2/Si substrates for comparison, at temperatures ranging from room temperature up to 625°C. Under pure argon, highly (111) textured Pt thin films were obtained on both substrates, regardless of the deposition temperature. However, by using an oxygen/argon mixture, highly (200) textured films could be obtained, only on CNOns/SiO2/Si substrate, when the substrate temperature is above 550°C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Their resistivity was measured at room temperature by the four-point probes method. © 202

Orientation control of Platinum electrode grown on silicon using [Ca2Nb3O10]− nanosheets as seed layer.

International audiencePlatinum (Pt) is a noble metal with low resistivity and resilience to oxidation, which is largely used in microelectronic devices. In order to facilitate the integration of Pt thin films on silicon substrate, we are showing the ability to control their orientation by using [Ca2Nb3O10]− nanosheets (CNOns) as seed layer. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO2/Si), and on TiO2/SiO2/Si substrates for comparison, at temperatures ranging from room temperature up to 625°C. Under pure argon, highly (111) textured Pt thin films were obtained on both substrates, regardless of the deposition temperature. However, by using an oxygen/argon mixture, highly (200) textured films could be obtained, only on CNOns/SiO2/Si substrate, when the substrate temperature is above 550°C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Their resistivity was measured at room temperature by the four-point probes method