InGaZnO based TFT structures for active matrix addressing

We present the results on a TFT active-matrix structure based on the InGaZnO (IGZO) semiconductor compound formed by the magnetron plasma-chemical deposition method. Their structural, morphological and electro physical properties were studied. InGaZnO is an amorphous n-type transparent conductive oxide. The main advantage of IGZO over organic semiconductors is the stability of their properties and the significantly higher mobility of charge carriers. Thus, the balance of the required properties inherent in IGZO makes it a promising material for optoelectronics, photonics and display technology

ТОНКОПЛЕНОЧНЫЕ ТРАНЗИСТОРЫ С InGaZnO-ПОЛУПРОВОДНИКОВЫМ СЛОЕМ ДЛЯ АКТИВНО-МАТРИЧНОЙ АДРЕСАЦИИ

The paper presents the results of a study of thin-film transistors based on the InGaZnO semiconductor compound (IGZO) for active-matrix displays addressing formed by magnetron plasma-chemical deposition. Their structural-morphological and electrophysical properties are investigated. Carrier mobility is analyzed using the Hall method. The effect of annealing in vacuum, an oxygen atmosphere, and a nitrogen atmosphere on the grain size of an IGZO film was investigated. The resulting layers are characterized by high mobility of charge carriers, which allows their use in the manufacture of new-generation LCD and OLED displays.В работе представлены результаты исследования тонкопленочных транзисторов на основе полупроводникового соединения InGaZnO (IGZO) для активно-матричной адресации дисплеев, формируемого методом магнетронного плазмохимического осаждения. Исследованы их структурно- морфологические и электрофизические свойства. Проведен анализ подвижности носителей заряда методом Холла. Изучено влияние отжига в вакууме, атмосфере кислорода и атмосфере азота на размер зерен пленки IGZO. Полученные слои характеризуются высокой подвижностью носителей заряда, что позволяет их использовать при изготовлении ЖК- и OLED-дисплеев нового поколения

Тонкопленочные транзисторы с InGaZnO-полупроводниковым слоем для активно-матричной адресации

В работе представлены результаты исследования тонкопленочных транзисторов на основе полупроводникового соединения InGaZnO (IGZO) для активно-матричной адресации дисплеев, формируемого методом магнетронного плазмохимического осаждения. Исследованы их структурно- морфологические и электрофизические свойства. Проведен анализ подвижности носителей заряда методом Холла. Изучено влияние отжига в вакууме, атмосфере кислорода и атмосфере азота на размер зерен пленки IGZO. Полученные слои характеризуются высокой подвижностью носителей заряда, что позволяет их использовать при изготовлении ЖК- и OLED-дисплеев нового поколения

Image Formation by Ink-Jet Printing in Micro- and Nanoporous Anodic Alumina Film with Capsulating

The image formation process based on the method of ink-jet printing in films of anodic aluminum oxide has been developed and investigated. The image resolution of 500 dpi was achieved on the films with 150 μm depth of pores. The films of anodic aluminum oxide were produced on aluminum foil by partial or through anodizing of aluminum followed by filling the pores with ink and their capsulation for protection. The obtained films have exceptional thermal and chemical stability. The low-temperature and low-cost process described in this article is promising for mass production of elements of microelectronic devices

Image Formation by Ink-Jet Printing in Micro- and Nanoporous Anodic Alumina Film with Capsulating

The image formation process based on the method of ink-jet printing in films of anodic aluminum oxide has been developed and investigated. The image resolution of 500 dpi was achieved on the films with 150 μm depth of pores. The films of anodic aluminum oxide were produced on aluminum foil by partial or through anodizing of aluminum followed by filling the pores with ink and their capsulation for protection. The obtained films have exceptional thermal and chemical stability. The low-temperature and low-cost process described in this article is promising for mass production of elements of microelectronic devices

Morphology and optical properties of aluminum oxide formed into oxalic electrolyte with addition surface active agents

The article discusses the results of investigations of porous films of alumina, formed into oxalic electrolyte with addition surface active agents, in particular, ordering structure, roughness of a surface, the optical transparency of the electrolyte concentration and surface active agents. Also discusses the features of the formation of porous films of temperature and IR radiation