Multi-view Graph Embedding with Hub Detection for Brain Network Analysis

Multi-view graph embedding has become a widely studied problem in the area of graph learning. Most of the existing works on multi-view graph embedding aim to find a shared common node embedding across all the views of the graph by combining the different views in a specific way. Hub detection, as another essential topic in graph mining has also drawn extensive attentions in recent years, especially in the context of brain network analysis. Both the graph embedding and hub detection relate to the node clustering structure of graphs. The multi-view graph embedding usually implies the node clustering structure of the graph based on the multiple views, while the hubs are the boundary-spanning nodes across different node clusters in the graph and thus may potentially influence the clustering structure of the graph. However, none of the existing works in multi-view graph embedding considered the hubs when learning the multi-view embeddings. In this paper, we propose to incorporate the hub detection task into the multi-view graph embedding framework so that the two tasks could benefit each other. Specifically, we propose an auto-weighted framework of Multi-view Graph Embedding with Hub Detection (MVGE-HD) for brain network analysis. The MVGE-HD framework learns a unified graph embedding across all the views while reducing the potential influence of the hubs on blurring the boundaries between node clusters in the graph, thus leading to a clear and discriminative node clustering structure for the graph. We apply MVGE-HD on two real multi-view brain network datasets (i.e., HIV and Bipolar). The experimental results demonstrate the superior performance of the proposed framework in brain network analysis for clinical investigation and application

Berry's phase contribution to the anomalous Hall effect of gadolinium

When conduction electrons are forced to follow the local spin texture, the resulting Berry phase can induce an anomalous Hall effect (AHE). In gadolinium, as in double-exchange magnets, the exchange interaction is mediated by the conduction electrons and the AHE may therefore resemble that of chromium dioxide and other metallic double-exchange ferromagnets. The Hall resistivity, magnetoresistance, and magnetization of single crystal gadolinium were measured in fields up to 30 T. Measurements between 2 K and 400 K are consistent with previously reported data. A scaling analysis for the Hall resistivity as a function of the magnetization suggests the presence of a Berry's-phase contribution to the anomalous Hall effect.Comment: 6 pages, 7 figures, submitted to Phys. Rev.

Reentrant spin glass behavior in a layered manganite La1.2Sr1.8Mn2O7 single crystals

We report here a detailed study of AC/DC magnetization and longitudinal/transverse transport properties of La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystals below $T_{c}$ = 121 K. We find that the resistivity upturn below 40 K is related to the reentrant spin glass phase at the same temperature, accompanied by additional anomalous Hall effects. The carrier concentration from the ordinary Hall effects remains constant during the transition and is close to the nominal doping level (0.4 holes/Mn). The spin glass behavior comes from the competition between ferromagnetic double exchange and antiferromagnetic superexchange interactions, which leads to phase separation, i.e. a mixture of ferromagnetic and antiferromagnetic clusters, representing the canted antiferromagnetic state.Comment: 5 pages, 5 figures, submitted to Phys. Rev.

Breakdown of the lattice polaron picture in La0.7Ca0.3MnO3 single crystals

When heated through the magnetic transition at Tc, La0.7Ca0.3MnO3 changes from a band metal to a polaronic insulator. The Hall constant R_H, through its activated behavior and sign anomaly, provides key evidence for polaronic behavior. We use R_H and the Hall mobility to demonstrate the breakdown of the polaron phase. Above 1.4Tc, the polaron picture holds in detail, while below, the activation energies of both R_H and the mobility deviate strongly from their polaronic values. These changes reflect the presence of metallic, ferromagnetic fluctuations, in the volume of which the Hall effect develops additional contributions tied to quantal phases.Comment: 11 pages, 3 figures, final version to appear in Phys. Rev. B Rapi

Effects of V/III ratio on ordering in GaInP: atomic scale mechanisms

Journal ArticleGa0.5In0.5P layers have been grown by organometallic vapor-phase epitaxy using various values of input V/III ratio for two phosphorus precursors, phosphine, the conventional precursor, and tertiarybutylphosphine (TBP), a newly developed, less-hazardous precursor. For growth on nominally (001) GaAs substrates misoriented by 3° (and in some cases by 0° or 6°) to produce [110] steps on the surface at a growth temperature of 620 °C, the Cu-Pt-type ordering is found to be strongly affected by the input flow rate of the phosphorus precursor (V/III ratio). For decreasing input partial pressures below 3 Torr for PH3 and 0.75 Torr for TBP the low-temperature photoluminescence (PL) peak energy increases indicating a lower degree of order. This is confirmed by transmission electron diffraction results. The decrease in the degree of order corresponds to a decrease in the concentration of [1-bar 10]-oriented P dimers on the surface, as indicated by surface photoabsorption spectroscopy results. These data indicate that the reduction in ordering is caused by the loss of the (2×4) reconstructed surface during growth. The difference in the behavior for PH3 and TBP is interpreted as due to the lower pyrolysis efficiency of PH3. The surface structure measured using high-resolution atomic force microscopy indicates that the [110] steps produced by the intentional misorientation of the substrate are bunched to produce supersteps approximately 30-40 Å in height for the lowest V/III ratios. The step height decreases markedly as the input phosphorus partial pressure increases from 0.4 to 0.75 Torr for TBP and from 1 to 3 Torr for PH3. This corresponds to a change from mainly monolayer to predominantly bilayer steps in the vicinal regions between bunched supersteps. Stabilization of the bilayer steps is interpreted as due to formation of the (2×2) reconstruction on the (111)B step edges. The degree of order is an inverted U-shaped function of the flow rate of the phosphorus precursor. Thus, use of very high input V/III ratios is also found to reduce the degree of order in the Ga0.5In0.5P layers. These high input phosphorus flow rates are found to result in a monotonic increase in the density of [1-bar 10]-oriented P dimers on the surface. This decrease in order is believed to be related to a change in the structure of kinks on the [110] steps at high V/III ratios

Effect of growth rate on step structure and ordering in GaInP

Journal ArticleCuPt ordering is widely observed in GaInP epitaxial layers grown by organometallic vapor phase epitaxy. The formation of this spontaneously ordered structure during epitaxial growth is intimately related to the atomic-scale physical processes occurring on the surface, specifically surface reconstruction and the attachment of atoms at steps. For growth on singular _x0002_001_x0003_ GaAs substrates the surface structure, measured using atomic force microscopy, is seen to consist of small islands surrounded by either monolayer or bilayer steps. An increase in the growth rate from 0.25 to 2.0 _x0004_m/h with a constant tertiarybutylphosphine partial pressure at 670 °C has no effect on either the degree of order or the step structure. Only the step spacing is observed to change. It decreases systematically as the growth rate is increased, following an approximate 1/_x0002_growth rate_x0003_ 1/2 dependence. As the growth rate increases, the time atoms have to rearrange before being frozen due to coverage by the next layer decreases. This leads directly to the dependence observed. These observations are consistent with previous observations which appear to show a close correlation between step structure _x0002_monolayer versus bilayer_x0003_ and ordering, although the causative factor has not been determined

The Discovery of Extended Thermal X-ray Emission from PKS 2152-699: Evidence for a `Jet-cloud' Interaction

A Chandra ACIS-S observation of PKS 2152-699 reveals thermal emission from a diffuse region around the core and a hotspot located 10" northeast from the core. This is the first detection of thermal X-ray radiation on kiloparsec scales from an extragalactic radio source. Two other hotspots located 47" north-northeast and 26" southwest from the core were also detected. Using a Raymond-Smith model, the first hotspot can be characterized with a thermal plasma temperature of 2.6$\times10^6$ K and an electron number density of 0.17 cm$^{-3}$. These values correspond to a cooling time of about 1.6$\times10^7$ yr. In addition, an emission line from the hotspot, possibly Fe xxv, was detected at rest wavelength 10.04\AA. The thermal X-ray emission from the first hotspot is offset from the radio emission but is coincident with optical filaments detected with broadband filters of HST/WFPC2. The best explanation for the X-ray, radio, and optical emission is that of a `jet-cloud' interaction. The diffuse emission around the nucleus of PKS 2152-699 can be modeled as a thermal plasma with a temperature of 1.2$\times10^7$ K and a luminosity of 1.8$\times10^{41}$ erg s$^{-1}$. This emission appears to be asymmetric with a small extension toward Hotspot A, similar to a jet. An optical hotspot (EELR) is seen less than an arcsecond away from this extension in the direction of the core. This indicates that the extension may be caused by the jet interacting with an inner ISM cloud, but entrainment of hot gas is unavoidable. Future observations are discussed.Comment: To appear in the Astrophysical Journal 21 pages, 5 Postscript figures, 1 table, AASTeX v. 5.