Support and injective resolutions of complexes over commutative rings

Examples are given to show that the support of a complex of modules over a commutative noetherian ring may not be read off the minimal semi-injective resolution of the complex. The same examples also show that a localization of a semi-injective complex need not be semi-injective.Comment: 5 pages; major revisions; to appear in Homology, Homotopy and application

Analysis of DoS Attacks at MAC Layer in Mobile Adhoc Networks

—Wireless network security has received tremendous attention due to the vulnerabilities exposed in the open communication medium. The most common wireless Medium Access Control (MAC) protocol is IEEE 802.11, which assumes all the nodes in the network are cooperative. However, nodes may purposefully misbehave in order to disrupt network performance, obtain extra bandwidth and conserve resources. These MAC layer misbehaviours can lead to Denial of Service (DoS) attacks which can disrupt the network operation. There is a lack of comprehensive analysis of MAC layer misbehaviour driven DoS attacks for the IEEE 802.11 protocol. This research studied possible MAC layer DoS attack strategies that are driven by the MAC layer malicious/selfish nodes and investigates the performance of the IEEE 802.11 protocol. Such DoS attacks caused by malicious and selfish nodes violating backoff timers associated with the protocol. The experimental and analytical approach evaluates several practical MAC layer backoff value manipulation and the impact of such attacks on the network performance and stability in MANETs. The simulation results show that introducing DoS attacks at MAC layer could significantly affect the network throughput and data packet collision rate. This paper concludes that DoS attacks with selfish/malicious intend can obtain a larger throughput by denying well-behaved nodes to obtain deserved throughput, also DoS attacks with the intend of complete destruction of the network can succee

Effect of doping on polarization profiles and switching in semiconducting ferroelectric thin films

This paper proposes a theory to describe the polarization and switching behavior of ferroelectrics that are also wide-gap semiconductors. The salient feature of our theory is that it does not make any a priori assumption about either the space charge distribution or the polarization profile. The theory is used to study a metal-ferroelectric-metal capacitor configuration, where the ferroelectric is n-type doped. The main result of our work is a phase diagram as a function of doping level and thickness that shows different phases, namely, films with polarization profiles that resemble that of undoped classical ferroelectrics, paraelectric, and a new head-to-tail domain structure. We have identified a critical doping level, which depends on the energy barrier in the Landau energy and the built-in potential, which is decided by the electronic structures of both the film and the electrodes. When the doping level is below this critical value, the behavior of the films is almost classical. We see a depleted region, which extends through the film when the film thickness is very small, but is confined to two boundary layers near the electrodes for large film thickness. When the doping level is higher than the critical value, the behavior is classical for only very thin films. Thicker films at this doping level are forced into a tail-to-tail configuration with three depletion layers, lose their ferroelectricity, and may thus be described as nonlinear dielectric or paraelectric. For films which are doped below the critical level, we show that the field required for switching starts out at the classical coercive field for very thin films, but gradually decreases

B\"{a}cklund transformations for the constrained dispersionless hierarchies and dispersionless hierarchies with self-consistent sources

The B\"{a}cklund transformations between the constrained dispersionless KP hierarchy (cdKPH) and the constrained dispersionless mKP hieararchy (cdmKPH) and between the dispersionless KP hieararchy with self-consistent sources (dKPHSCS) and the dispersionless mKP hieararchy with self-consistent sources (dmKPHSCS) are constructed. The auto-B\"{a}cklund transformations for the cdmKPH and for the dmKPHSCS are also formulated.Comment: 11 page

Monte Carlo Particle Lists: MCPL

A binary format with lists of particle state information, for interchanging particles between various Monte Carlo simulation applications, is presented. Portable C code for file manipulation is made available to the scientific community, along with converters and plugins for several popular simulation packages

Minimal field requirement in precessional magnetization switching

We investigate the minimal field strength in precessional magnetization switching using the Landau-Lifshitz-Gilbert equation in under-critically damped systems. It is shown that precessional switching occurs when localized trajectories in phase space become unlocalized upon application of field pulses. By studying the evolution of the phase space, we obtain the analytical expression of the critical switching field in the limit of small damping for a magnetic object with biaxial anisotropy. We also calculate the switching times for the zero damping situation. We show that applying field along the medium axis is good for both small field and fast switching times.Comment: 6 pages, 7 figure