Separating spin and charge transport in single wall carbon nanotubes

We demonstrate spin injection and detection in single wall carbon nanotubes using a 4-terminal, non-local geometry. This measurement geometry completely separates the charge and spin circuits. Hence all spurious magnetoresistance effects are eliminated and the measured signal is due to spin accumulation only. Combining our results with a theoretical model, we deduce a spin polarization at the contacts of approximately 25 %. We show that the magnetoresistance changes measured in the conventional two-terminal geometry are dominated by effects not related to spin accumulation.Comment: Number of pages: 11 Number of figures:

Verification of the Thomson-Onsager reciprocity relation for spin caloritronics

We investigate the Thomson-Onsager relation between the spin-dependent Seebeck and spin-dependent Peltier effect. To maintain identical device and measurement conditions we measure both effects in a single Ni$_{80}$Fe$_{20}$/Cu/Ni$_{80}$Fe$_{20}$ nanopillar spin valve device subjected to either an electrical or a thermal bias. In the low bias regime, we observe similar spin signals as well as background responses, as required by the Onsager reciprocity relation. However, at large biases, deviation from reciprocity occurs due to dominant nonlinear contribution of the temperature dependent transport coefficients. By systematic modeling of these nonlinear thermoelectric effects and measuring higher order thermoelectric responses for different applied biases, we identify the transition between the two regimes as the point at which Joule heating start to dominate over Peltier heating. Our results signify the importance of local equilibrium for the validity of this phenomenological reciprocity relation.Comment: 5 pages, 5 figure

The Magneto-coulomb effect in spin valve devices

We discuss the influence of the magneto-coulomb effect (MCE) on the magnetoconductance of spin valve devices. We show that MCE can induce magnetoconductances of several per cents or more, dependent on the strength of the coulomb blockade. Furthermore, the MCE-induced magnetoconductance changes sign as a function of gate voltage. We emphasize the importance of separating conductance changes induced by MCE from those due to spin accumulation in spin valve devices.Comment: This paper includes 3 figure

Observation of anomalous Hanle spin precession lineshapes resulting from interaction with localized states

It has been shown recently that in spin precession experiments, the interaction of spins with localized states can change the response to a magnetic field, leading to a modified, effective spin relaxation time and precession frequency. Here, we show that also the shape of the Hanle curve can change, so that it cannot be fitted with the solutions of the conventional Bloch equation. We present experimental data that shows such an effect arising at low temperatures in epitaxial graphene on silicon carbide with localized states in the carbon buffer layer. We compare the strength of the effect between materials with different growth methods, epitaxial growth by sublimation and by chemical vapor deposition. The presented analysis gives information about the density of localized states and their coupling to the graphene states, which is inaccessible by charge transport measurements and can be applied to any spin transport channel that is coupled to localized states.Comment: 6 pages, 6 figure

Comment on "Observation of Spin Injection at a Ferromagnet-Semiconductor Interface, by P.R. Hammar et al

In a recent Letter Hammar et al. claim the observation of injection of a spin-polarized current in a two-dimensional electron gas (2DEG). This is an important observation, since, despite considerable effort of several groups, all attempts to realize spin-injection into a 2DEG using purely electrical measurements have failed sofar. However, in my opinion the claim made is not correct, and the observed behaviour can be explained by a combination of a magneto resistance (Hall) effect (e.g. generated by the fringe magnetic fields present at the edges of the ferromagnetic electrode), with a {\it spin-independent} rectification effect due to the presence of a metal- semiconductor junction.Comment: accepted for PRL, 1 pag

Unified description of bulk and interface-enhanced spin pumping

The dynamics of non-equilibrium spin accumulation generated in metals or semiconductors by rf magnetic field pumping is treated within a diffusive picture. The dc spin accumulation produced in a uniform system by a rotating applied magnetic field or by a precessing magnetization of a weak ferromagnet is in general given by a (small) fraction of hbar omega, where omega is the rotation or precession frequency. With the addition of a neighboring, field-free region and allowing for the diffusion of spins, the spin accumulation is dramatically enhanced at the interface, saturating at the universal value hbar omega in the limit of long spin relaxation time. This effect can be maximized when the system dimensions are of the order of sqrt(2pi D omega), where D is the diffusion constant. We compare our results to the interface spin pumping theory of A. Brataas et al. [Phys. Rev. B 66, 060404(R) (2002)]