Comparison of wall/divertor deuterium retention and plasma fueling requirements on the DIII-D, TdeV, and ASDEX-upgrade tokamaks

The authors present a comparison of the wall deuterium retention and plasma fueling requirements of three diverted tokamaks, DIII-D, TdeV, and ASDEX-Upgrade, with different fractions of graphite coverage of stainless steel or Inconel outer walls and different heating modes. Data from particle balance experiments on each tokamak demonstrate well-defined differences in wall retention of deuterium gas, even though all three tokamaks have complete graphite coverage of divertor components and all three are routinely boronized. This paper compares the evolution of the change in wall loading and net fueling efficiency for gas during dedicated experiments without Helium Glow Discharge Cleaning on the DIII-D and TdeV tokamaks. On the DIII-D tokamak, it was demonstrated that the wall loading could be increased by > 1,250 Torr-1 (equivalent to 150 {times} plasma particle content) plasma inventories resulting in an increase in fueling efficiency from 0.08 to 0.25, whereas the wall loading on the TdeV tokamak could only be increased by < 35 Torr-{ell} (equivalent to 50{times} plasma particle content) plasma inventories at a maximum fueling efficiency {approximately} 1. Data from the ASDEX-Upgrade tokamak suggests qualitative behavior of wall retention and fueling efficiency similar to DIII-D

Correlation between blister skin thickness, the maximum in the damage- energy distribution, and projected ranges of helium ions in Nb for the energy range 10 to 1500 keV

The skin thickness of blisters formed on polycrystalline niobium by $sup 4$He$sup +$ irradiation at room temperature for energies from 15 to 80 keV have been measured. Similar measurements were conducted for 10 keV $sup 4$He$sup +$ irradiation at 500$sup 0$C to increase blister exfoliation, and thereby allow examination of a larger number of blister skins. For energies smaller than 100 keV the skin thicknesses are compared with the projected range and the damage- energy distributions constructed from moments interpolated from Winterbon's tabulated values. For energies of 10 and 15 keV the projected ranges and damage- energy distributions have also been computed with a Monte Carlo program. For energies larger than 100 keV the projected ranges of $sup 4$He$sup +$ in Nb were calculated using either Brice's formalism or the one given by Schiott. The thicknesses for 60 and 80 keV, and those reported earlier for 100 to 1500 keV correlate well with calculated projected ranges. For energies lower than 60 keV the measured thicknesses are larger than the calculated ranges

Thermal evolution of defects produced by implantation of H, D and He in Silicon

Despite decades of study, voids in silicon produced by implantation of H or He followed by annealing continue to be a topic of interest. There are two key applications: gettering of heavy metal impurities, and "ion cutting" used in silicon-on-insulator fabrication. Positron annihilation is one of the few techniques that can probe the vacancies and vacancy clusters that are the precursors to void formation. Data from recent studies will be discussed, including (I) isotopic substitution, in which comparisons of H vs. D implantation permit examination of the impact of primary point defects vs. chemical effects. Remarkable differences exist between H and D in blistering of silicon - ion doses 2-3 times higher are required for blistering with D than with H, despite a higher rate of primary defect production for D; (II) the effect of annealing temperature ramp-rate, in which we show that ramp-rate has a significant impact on residual defects, despite which it is so disregarded as to often be omitted from published reports; and (III) comparisons with electron microscopy which suggest that positron annihilation can be insensitive to large voids. In these studies, positron annihilation augments data from techniques including ion channelling, Raman scattering and electron microscopy; the suite of techniques allows elucidation of the interplay between implanted impurities and the vacancies and interstitials created by implantation