Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured

Ratchet Cellular Automata

In this work we propose a ratchet effect which provides a general means of performing clocked logic operations on discrete particles, such as single electrons or vortices. The states are propagated through the device by the use of an applied AC drive. We numerically demonstrate that a complete logic architecture is realizable using this ratchet. We consider specific nanostructured superconducting geometries using superconducting materials under an applied magnetic field, with the positions of the individual vortices in samples acting as the logic states. These devices can be used as the building blocks for an alternative microelectronic architecture.Comment: 4 pages, 3 figure

From the Complete Yang Model to Snyder's Model, de Sitter Special Relativity and Their Duality

By means of Dirac procedure, we re-examine Yang's quantized space-time model, its relation to Snyder's model, the de Sitter special relativity and their UV-IR duality. Starting from a dimensionless dS_5-space in a 5+1-d Mink-space a complete Yang model at both classical and quantum level can be presented and there really exist Snyder's model, the dS special relativity and the duality.Comment: 7 papge

Deep Traps in AlGaN/GaN Heterostructures Studied by Deep Level Transient Spectroscopy: Effect of Carbon Concentration in GaN Buffer Layers

Electrical properties, including leakage currents, threshold voltages, and deep traps, of AlGaN/GaN heterostructure wafers with different concentrations of carbon in the GaN buffer layer, have been investigated by temperature dependent current-voltage and capacitance-voltage measurements and deep level transient spectroscopy (DLTS), using Schottky barrier diodes (SBDs). It is found that (i) SBDs fabricated on the wafers with GaN buffer layers containing a low concentration of carbon (low-[C] SBD) or a high concentration of carbon (high-[C] SBD) have similar low leakage currents even at 500 K; and (ii) the low-[C] SBD exhibits a larger (negative) threshold voltage than the high-[C] SBD. Detailed DLTS measurements on the two SBDs show that (i) different trap species are seen in the two SBDs: electron traps Ax (0.9 eV), A1 (0.99 eV), and A2 (1.2 eV), and a holelike trap H1 (1.24 eV) in the low-[C] SBD; and electron traps A1, A2, and A3 ( ∼ 1.3 eV), and a holelike trap H2 (\u3e1.3 eV) in the high-[C] SBD; (ii) for both SDBs, in the region close to GaN buffer layer, only electron traps can be detected, while in the AlGaN/GaN interface region, significant holelike traps appear; and iii) all of the deep traps show a strong dependence of the DLTS signal on filling pulse width, which indicates they are associated with extended defects, such as threading dislocations. However, the overall density of electron traps is lower in the low-[C] SBD than in the high-[C] SBD. The different traps observed in the two SBDs are thought to be mainly related to differences in microstructure (grain size and threading dislocation density) of GaN buffer layers grown at different pressures