142 research outputs found
Electric Field Effects on Graphene Materials
Understanding the effect of electric fields on the physical and chemical
properties of two-dimensional (2D) nanostructures is instrumental in the design
of novel electronic and optoelectronic devices. Several of those properties are
characterized in terms of the dielectric constant which play an important role
on capacitance, conductivity, screening, dielectric losses and refractive
index. Here we review our recent theoretical studies using density functional
calculations including van der Waals interactions on two types of layered
materials of similar two-dimensional molecular geometry but remarkably
different electronic structures, that is, graphene and molybdenum disulphide
(MoS). We focus on such two-dimensional crystals because of they
complementary physical and chemical properties, and the appealing interest to
incorporate them in the next generation of electronic and optoelectronic
devices. We predict that the effective dielectric constant () of
few-layer graphene and MoS is tunable by external electric fields (). We show that at low fields ( V/\AA)
assumes a nearly constant value 4 for both materials, but increases at
higher fields to values that depend on the layer thickness. The thicker the
structure the stronger is the modulation of with the electric
field. Increasing of the external field perpendicular to the layer surface
above a critical value can drive the systems to an unstable state where the
layers are weakly coupled and can be easily separated. The observed dependence
of on the external field is due to charge polarization driven by
the bias, which show several similar characteristics despite of the layer
considered.Comment: Invited book chapter on Exotic Properties of Carbon Nanomatter:
Advances in Physics and Chemistry, Springer Series on Carbon Materials.
Editors: Mihai V. Putz and Ottorino Ori (11 pages, 4 figures, 30 references
Metastability and Transient Effects in Vortex Matter Near a Decoupling Transition
We examine metastable and transient effects both above and below the
first-order decoupling line in a 3D simulation of magnetically interacting
pancake vortices. We observe pronounced transient and history effects as well
as supercooling and superheating between the 3D coupled, ordered and 2D
decoupled, disordered phases. In the disordered supercooled state as a function
of DC driving, reordering occurs through the formation of growing moving
channels of the ordered phase. No channels form in the superheated region;
instead the ordered state is homogeneously destroyed. When a sequence of
current pulses is applied we observe memory effects. We find a ramp rate
dependence of the V(I) curves on both sides of the decoupling transition. The
critical current that we obtain depends on how the system is prepared.Comment: 10 pages, 15 postscript figures, version to appear in PR
Characterization of collective ground states in single-layer NbSe2
Layered transition metal dichalcogenides (TMDs) are ideal systems for
exploring the effects of dimensionality on correlated electronic phases such as
charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets
in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these
electronic states coexist but their microscopic formation mechanisms remain
controversial. Here we present an electronic characterization study of a single
2D layer of NbSe2 by means of low temperature scanning tunneling
microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy
(ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW
order in NbSe2 remains intact in 2D. Superconductivity also still remains in
the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS
measurements at 5 K reveal a CDW gap of {\Delta} = 4 meV at the Fermi energy,
which is accessible via STS due to the removal of bands crossing the Fermi
level for a single layer. Our observations are consistent with the simplified
(compared to bulk) electronic structure of single-layer NbSe2, thus providing
new insight into CDW formation and superconductivity in this model
strongly-correlated system.Comment: Nature Physics (2015), DOI:10.1038/nphys352
Aldosterone does not require angiotensin II to activate NCC through a WNK4–SPAK–dependent pathway
We and others have recently shown that angiotensin II can activate the sodium chloride cotransporter (NCC) through a WNK4–SPAK-dependent pathway. Because WNK4 was previously shown to be a negative regulator of NCC, it has been postulated that angiotensin II converts WNK4 to a positive regulator. Here, we ask whether aldosterone requires angiotensin II to activate NCC and if their effects are additive. To do so, we infused vehicle or aldosterone in adrenalectomized rats that also received the angiotensin receptor blocker losartan. In the presence of losartan, aldosterone was still capable of increasing total and phosphorylated NCC twofold to threefold. The kinases WNK4 and SPAK also increased with aldosterone and losartan. A dose-dependent relationship between aldosterone and NCC, SPAK, and WNK4 was identified, suggesting that these are aldosterone-sensitive proteins. As more functional evidence of increased NCC activity, we showed that rats receiving aldosterone and losartan had a significantly greater natriuretic response to hydrochlorothiazide than rats receiving losartan only. To study whether angiotensin II could have an additive effect, rats receiving aldosterone with losartan were compared with rats receiving aldosterone only. Rats receiving aldosterone only retained more sodium and had twofold to fourfold increase in phosphorylated NCC. Together, our results demonstrate that aldosterone does not require angiotensin II to activate NCC and that WNK4 appears to act as a positive regulator in this pathway. The additive effect of angiotensin II may favor electroneutral sodium reabsorption during hypovolemia and may contribute to hypertension in diseases with an activated renin–angiotensin–aldosterone system
Functional identification of H-K-ATPase in intercalated cells of cortical collecting tubule
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