50 research outputs found
Salivary pellets induce a pro-inflammatory response involving the TLR4–NF-kB pathway in gingival fibroblasts
Oral health behaviour in migrant and non-migrant adults in Germany: the utilization of regular dental check-ups
The electric field at hole injecting metal/organic interfaces as a cause for manifestation of exponential bias-dependent mobility
The hole drift current induced electric field at hole injecting electrode/organic interface and its influence on Gaussian disordered states
The electric field at the hole-injecting metal/organic interface controls the bias dependence of the current–voltage hole mobility
Abstract
Based upon the room temperature current–voltage data of some published organic diode structures the unique phenomenon of the decreasing hole mobility, μ, with the increasing applied electric field, E
a, is interpreted. The measurable quantity, the hole drift mobility μ
d is formulated in terms of E
a and the electric field at the hole injecting metal/organic interface, E
int, dependent algebraic function multiplied by the intrinsic hole mobility, μ
max that is organic morphology dependent but E
a independent scaling factor. On account that the intrinsic mobility, μ
max, is uncoupled from both E
a and E
int it is shown that the origin of the negative field hole mobility effect occurs due to E
int, that is a linear function of E
a. The bias and the space distribution of the internal organic electric field, E, as well as the free hole density, p, for poly(3-hexylthiophene) is calculated in detail. Depending on the organic layer morphology the internal electric field may exhibit, at the particular value of E
a, a deep well in the vicinity of the hole injecting metal/organic interface. Then the strong peak of the free hole density exists there the effect of which is spreading some 10 nm into the organic. If E
int happens to be E
a independent constant, then from the resulting space charge limited current density, the increasing hole drift mobility, μ
d, with the increasing applied electric field, E
a, is deduced. The published current–voltage data of two distinct metal-substituted phthalocyanine thin films provide an additional confirmation of the described formalism.</jats:p
QNS investigation of d-EBBA core reorientations in oriented nematic and isotropic phases
The elimination of interface charge density singularity in single layer organic semiconductor structures
The density-of-states contributions to the negative field charge drift mobility effect in poly(3-hexylthiophene) organic semiconductor
On the spacer and mesogenic unit QNS reorientational motion investigation in liquid crystal polyacrylate
The incoherent quasi elastic cold neutron scattering data of the side chain dynamics of the backnbone deuterated linear polymer polyacrylate of Benguigui et al. J. Phys. II France 1
(1991) 451), have been successfully interpreted in the isotropic, smectic A and re-entrant nematic phases. The spacer dynamics of the twelve protons are interpreted in terms of the mode1 according to which the protons are subjectec to the transverse oscillations of the standing wave variety with only the fundamental mode of vibrations being excited. The motion of the biphenyl group, constituting the mesogenic unit, can be appropriately described in terms of the uniaxial restricted reorientational model, according to which the benzene rings are subjected, to small step stochastic angular displacements, around their para axis, within a circular segment of an apex angle
