Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, their characterization and Transistor Performance under Illumination.

Multilayered heterostructures comprising of In 2 O 3, SnO 2, and Al 2 O 3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200°C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400°C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al 2 O 3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In 2 O 3 /SnO 2 /Al 2 O 3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (µ sat ) of 2.0 cm 2 ·V -1 s -1, a threshold-voltage (V th ) of 8.6 V, a high current on/off ratio (I On /I Off ) of 1.0·10 7, and a subthreshold swing (SS) of 485 mV·dec -1. The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm)

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Multilayered heterostructures comprising of In 2 O 3, SnO 2, and Al 2 O 3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200°C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400°C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al 2 O 3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In 2 O 3 /SnO 2 /Al 2 O 3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (µ sat ) of 2.0 cm 2 ·V -1 s -1, a threshold-voltage (V th ) of 8.6 V, a high current on/off ratio (I On /I Off ) of 1.0·10 7, and a subthreshold swing (SS) of 485 mV·dec -1. The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm)