Impact Excitation by Hot Carriers in Carbon Nanotubes

We investigate theoretically the efficiency of intra-molecular hot carrier induced impact ionization and excitation processes in carbon nanotubes. The electron confinement and reduced screening lead to drastically enhanced excitation efficiencies over those in bulk materials. Strong excitonic coupling favors neutral excitations over ionization, while the impact mechanism populates a different set of states than that produced by photoexcitation. The excitation rate is strongly affected by optical phonon excitation and a simple scaling of the rate with the field strength and optical phonon temperature is obtained.Comment: 5 pages 4 figure

Drain Voltage Scaling in Carbon Nanotube Transistors

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.Comment: 4 pages, 4 EPS figure, to appear in Appl. Phys. Lett. (issue of 15 Sept 2003

Exciton-phonon effects in carbon nanotube optical absorption

We find that the optical properties of carbon nanotubes reflect remarkably strong effects of exciton-phonon coupling. Tight-binding calculations show that a significant fraction of the spectral weight of the absorption peak is transferred to a distinct exciton+phonon sideband, which is peaked at around 200 meV above the main absorption peak. This sideband provides a distinctive signature of the excitonic character of the optical transition. The exciton-phonon coupling is reflected in a dynamical structural distortion, which contributes a binding energy of up to 100 meV. The distortion is surprisingly long-ranged, and is strongly dependent on chirality.Comment: 5 pages, 3 figure

Band Structure and Quantum Conductance of Nanostructures from Maximally-Localized Wannier Functions: The Case of Functionalized Carbon Nanotubes

We have combined large-scale, $\Gamma$-point electronic-structure calculations with the maximally-localized Wannier functions approach to calculate efficiently the band structure and the quantum conductance of complex systems containing thousands of atoms while maintaining full first-principles accuracy. We have applied this approach to study covalent functionalizations in metallic single-walled carbon nanotubes. We find that the band structure around the Fermi energy is much less dependent on the chemical nature of the ligands than on the $sp^3$ functionalization pattern disrupting the conjugation network. Common aryl functionalizations are more stable when paired with saturating hydrogens; even when paired, they still act as strong scattering centers that degrade the ballistic conductance of the nanotubes already at low degrees of coverage.Comment: To be published in Phys. Rev. Let

The role of contacts in graphene transistors: A scanning photocurrent study

A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is discussed in light of the potential profiles obtained from this photocurrent imaging approach. Furthermore, we show that photocurrent imaging can be used to probe single- / multi-layer graphene interfaces

Carbon Nanotubes as Schottky Barrier Transistors

We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors", in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.Comment: 4 pages, 5 figures, appears in Physical Review Letter

Competition between magnetic field dependent band structure and coherent backscattering in multiwall carbon nanotubes

Magnetotransport measurements in large diameter multiwall carbon nanotubes (20-40 nm) demonstrate the competition of a magnetic-field dependent bandstructure and Altshuler-Aronov-Spivak oscillations. By means of an efficient capacitive coupling to a backgate electrode, the magnetoconductance oscillations are explored as a function of Fermi level shift. Changing the magnetic field orientation with respect to the tube axis and by ensemble averaging, allows to identify the contributions of different Aharonov-Bohm phases. The results are in qualitative agreement with numerical calculations of the band structure and the conductance.Comment: 4 figures, 5 page

Electron-phonon effects and transport in carbon nanotubes

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of ~70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.Comment: 5 pages and 4 figure