Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for “large signal” constant temperature changes, as well as for “small signal” fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets

Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review

In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limits of available materials. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element's indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of recent innovative design geometries has enabled the development of a series of silicon nanophotonics and nanoelectronics devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this comprehensive review is a new, methodical approach showcasing examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications. After presenting stand-alone devices, we discuss concerns, considerations, trends and forecasts regarding their possible integration into nanophotonics modules and platforms

Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor

HAND (Hall Amplifier Nanoscale Device), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining a well-known macro effect into the nanoscale world. HAND is based on the well-known Hall Effect, and it may enable circuitry working at very high frequencies (tens of Tera-Hertz). The architecture, design, and simulations were performed while using Comsol Multi-Physics Package Software. Complementary accurate analytical models were developed to support the understanding of the device functionality, including treatment of specific phenomena, such as heat transfer, and mega-magnet feasibility inside integrated circuits. This new device, combining both the Hall Effect and nanoscale dimensions, holds the potential to change the computing rates in the microelectronics circuitry world, and can serve as a game changer

Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process

Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL) effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature

Design and Modeling of Light Emitting Nano-Pixel Structure (LENS) for High Resolution Display (HRD) in a Visible Range

LENS (Light Emitting Nano-pixel Structure), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining high resolution and high brightness for display, essentially adapted for Augmented Reality (AR) and Virtual Reality. The device is made of two parts: The first one is a reflective nano-cone Light Emitting Device (LED) structure to reduce the Total Internal Reflection effects (TIR), and to enable improved light extraction efficiency. The second part is a Compound Parabolic Concentrator (CPC) above the nano-LED to narrow the outgoing light angular distribution so most of the light would be “accepted” by an imaging system. Such a way is drastically limiting any unnecessary light loss. Our simulations show that the total light intensity gain generated by each part of the pixel is at least 3800% when compared to a typical flat LED. It means that, for the same electrical power consumption, the battery life duration is increased by 38. Furthermore, this improvement significantly decreases the display thermal radiation by at least 300%. Since pixel resolution is critical to offer advanced applications, an extensive feasibility study was performed, using the LightTools software package for ray tracing optimization. In addition to the simulation results, an analytical model was developed. This new device holds the potential to change the efficiency for military, professional and consumer applications, and can serve as a game changer

Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device

Ultra-fast electrical switches activated with an optical-polarized light trigger, also called photo-polarized activated electrical switches, are presented. A set of new transistor circuits is switched by light from above, illuminating deep V-grooves, whose angle is sensitive to the polarization of the incident. Thus, this application may serve for encryption/decryption devices since the strongest electrical responsivity is only obtained for very specific spatial polarization directions of the illumination beam. When this V-groove is sufficiently narrow, the device mainly responds to one polarization and not to the other. In such a way, electrons are generated only for one specific polarization. While the nature of the data remains electronic, the modulation control is optic, creating a photo-induced current depending on the polarization direction. This coupled device acts as a polarization modulator as well as an intensity modulator. The article focuses on the integration of several devices in different configurations of circuitry: dual, triple, and multi-element. Case studies of several adjacent devices are presented with varying critical variables, such as the V-groove aperture dimensions. Analytical models and complementary numerical analyses are presented for the future smooth integration into Complementary Metal-Oxide-Semiconductor (CMOS) technology

Full Field Imaging Ellipsometry (FFIE) Platform Using CCD Camera and Advanced Software for Simultaneous Spots' Sensing and Measurement

This article describes a new approach for performing full field imaging ellipsometry. In this new technique, the objective lens of a high numerical aperture microscope is used to illuminate the surface of a 2D object. The light reflected from each point of the surface is gathered by the same lens and projected onto a 2D CCD detectors array; thus, enabling the measurement of numerous surface points simultaneously. Using this simple method, areas of up to 0.9 cm2 can be measured with high accuracy. Since the nanotechnology domain is rapidly growing, such a technique can bring benefits to the scientific community, facing the need to analyze large surfaces of thin films.</p

Improving Interferometry Instrumentation by Mixing Stereoscopy for 2π Ambiguity Solving

Phase measurements obtained by high-coherence interferometry are restricted by the 2π ambiguity to height differences smaller than λ/2. A further restriction considers linear and nonlinear aberrations evolving in most interferometric systems due to the CCD-type array detectors. The authors present a new method to overcome the 2π ambiguity in interferometry when using a stereoscopic approach. In this method, a reconstructed wavefront reflected from an object was propagated into two different angles to obtain two different images of the object. These two different images were subsequently processed by stereo algorithms to resolve the 2π ambiguity. Such a method of wavefront propagation may enable several applications such as focusing and resolving the 2π ambiguity, as described in the article