1 research outputs found
Field-induced polarisation of Dirac valleys in bismuth
Electrons are offered a valley degree of freedom in presence of particular
lattice structures. Manipulating valley degeneracy is the subject matter of an
emerging field of investigation, mostly focused on charge transport in
graphene. In bulk bismuth, electrons are known to present a threefold valley
degeneracy and a Dirac dispersion in each valley. Here we show that because of
their huge in-plane mass anisotropy, a flow of Dirac electrons along the
trigonal axis is extremely sensitive to the orientation of in-plane magnetic
field. Thus, a rotatable magnetic field can be used as a valley valve to tune
the contribution of each valley to the total conductivity. According to our
measurements, charge conductivity by carriers of a single valley can exceed
four-fifth of the total conductivity in a wide range of temperature and
magnetic field. At high temperature and low magnetic field, the three valleys
are interchangeable and the three-fold symmetry of the underlying lattice is
respected. As the temperature lowers and/or the magnetic field increases, this
symmetry is spontaneously lost. The latter may be an experimental manifestation
of the recently proposed valley-nematic Fermi liquid state.Comment: 14 pages + 5 pages of supplementary information; a slightly modified
version will appear as an article in Nature physic