Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Single crystal BaTiO3 thin films have been transferred onto Pt-coated and Si3N4-coated substrates by the ion implantation-induced layer transfer method using H+ and He+ ion coimplantation and subsequent annealing. The transferred BaTiO3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO3 film domain structure closely resembles that of bulk tetragonal BaTiO3 and atomic force microscopy shows a 90degrees a-c domain structure with a tetragonal angle of 0.5degrees-0.6degrees. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO3 but recovers during anneals above the Curie temperature. The piezoelectric coefficient, d(33), is estimated from PFM to be 80-100 pm/V and the coercive electric field (E-c) is 12-20 kV/cm, comparable to those in single crystal BaTiO3

Electromagnetic energy transfer and switching in nanoparticle chain arrays below the diffraction limit

Electromagnetic energy transfer in plasmon wires consisting of chains of closely spaced metal nanoparticles can occur below the diffraction limit by means of coupled plasmon modes. Coherent propagation with group velocities that exceed 0.1 c is possible in straight wires and around sharp corners (bending radius much less than wavelength of visible light). Energy transmission through chain networks is possible at high efficiencies and is a strong function of the frequency and polarization direction of the plasmon mode. Although these structures exhibit transmission losses due to heating of about 3 dB/500 nm, they have optical functionality that cannot be obtained in other ways at a length scale ≪1 μm

Electromagnetic energy transport along arrays of closely spaced metal rods as an analogue to plasmonic devices

The transport of electromagnetic energy along structures consisting of arrays of closely spaced metal rods (spacing = 0.2 cm) was investigated in the microwave regime at 8.0 GHz (lambda= 3.7 cm). The dispersion relation shows that information transport occurs at a group velocity of 0.6c. The electromagnetic energy is highly confined to the arrays (90% within a distance of 0.05lambda from the array). The propagation loss in a straight array is 3 dB/8 cm. Routing of energy around 90° corners is possible with a power loss of 3–4 dB. Analogies to plasmon wires consisting of arrays of nm-size metal clusters are discussed

Ray optical light trapping in silicon microwires: exceeding the 2n^2 intensity limit

We develop a ray optics model of a silicon wire array geometry in an attempt to understand the very strong absorption previously observed experimentally in these arrays. Our model successfully reproduces the n^2 ergodic limit for wire arrays in free space. Applying this model to a wire array on a Lambertian back reflector, we find an asymptotic increase in light trapping for low filling fractions. In this case, the Lambertian back reflector is acting as a wide acceptance angle concentrator, allowing the array to exceed the ergodic limit in the ray optics regime. While this leads to increased power per volume of silicon, it gives reduced power per unit area of wire array, owing to reduced silicon volume at low filling fractions. Upon comparison with silicon microwire experimental data, our ray optics model gives reasonable agreement with large wire arrays (4 μm radius), but poor agreement with small wire arrays (1 μm radius). This suggests that the very strong absorption observed in small wire arrays, which is not observed in large wire arrays, may be significantly due to wave optical effects

Alien Registration- Atwater, Minnie L. (Mapleton, Aroostook County)

https://digitalmaine.com/alien_docs/33994/thumbnail.jp

Models for quantitative charge imaging by atomic force microscopy

Two models are presented for quantitative charge imaging with an atomic-force microscope. The first is appropriate for noncontact mode and the second for intermittent contact (tapping) mode imaging. Different forms for the contact force are used to demonstrate that quantitative charge imaging is possible without precise knowledge of the contact interaction. From the models, estimates of the best charge sensitivity of an unbiased standard atomic-force microscope cantilever are found to be on the order of a few electrons

Leader distance: A review and a proposed theory

The concept of leader distance has been subsumed in a number of leadership theories; however, with few exceptions, leadership scholars have not expressly defined nor discussed leader distance, how distance is implicated in the legitimization of a leader, and how distance affects leader outcomes. We review available literature and demonstrate that integral to untangling the dynamics of the leadership influencing process is an understanding of leader-follower distance. We present distance in terms of three independent dimensions: leader-follower physical distance, perceived social distance, and perceived task interaction frequency. We discuss possible antecedents of leader-follower distance, including organizational and task characteristics, national culture, and leader/follower implicit motives. Finally, we use configural theory to present eight typologies (i.e., coexistence of a cluster or constellation of independent factors serving as a unit of analysis) of leader distance and propose an integrated cross-level model of leader distance, linking the distance typologies to leader outcomes at the individual and group levels of analysis

Competing failure mechanisms in thin films: Application to layer transfer

We investigate the origin of transverse cracks often observed in thin films obtained by the layer transfer technique. During this process, two crystals bonded to each other containing a weak plane produced by ion implantation are heated to let a thin layer of one of the material on the other. The level of stress imposed on the film during the heating phase due to the mismatch of thermal expansion coefficients of the substrate and the film is shown to be the dominent factor in determining the quality of the transferred layer. In particular, it is shown that if the film is submitted to a tensile stress, the microcracks produced by ion implantation are not stable and deviate from the plane of implantation making the layer transfer process impossible. However, if the compressive stress exceeds a threshold value, after layer transfer, the film can buckle and delaminate, leading to transverse cracks induced by bending. As a result, we show that the imposed stress σ_m —- or equivalently the heating temperature -— must be within the range −σ_c<σ_m<0 to produce an intact thin film where σ_c depends on the interfacial fracture energy and the size of defects at the interface between film and substrate