Microwave Photonic Characterization of High Temperature Superconducting Optoelectronic Devices

The increasing demand for high performance communications systems and signal processing is constantly driving researchers to develop novel devices in both the microwave and optical domains. The possibility of using high temperature superconductors (HTS) as a platform for ultra-fast, ultra-high sensitive optoelectronic and microwave photonic devices has been explored. This report introduces a cryogenic microwave photonic probe station, designed and built to characterize HTS microwave photonic devices. A methodology is presented to design coplanar waveguide transmission lines using HTS. The transmission line is then modified to include a meander line structure to serve the optoelectronic function. The device is characterized in several different operating domains, as an optically tunable microwave resonator, an optically tunable delay line, and finally as a photodetector. A planar HTS weak leak structure is investigated with the measurements of the I-V characteristics. Moreover, this device is proposed as the next generation platform to fabricate ultra-fast and ultra-high sensitive photodetectors using HTS

Efficient Single Photon Absorption by Optimized Superconducting Nanowire Geometries

We report on simulation results that shows optimum photon absorption by superconducting nanowires can happen at a fill-factor that is much less than 100%. We also present experimental results on high performance of our superconducting nanowire single photon detectors realized using NbTiN on oxidized silicon.Comment: \copyright 2013 IEEE. Submitted to "Numerical Simulation of Optoelectronic Devices - NUSOD 2013" on 19-April-201

Diamond optomechanical crystals

Cavity-optomechanical systems realized in single-crystal diamond are poised to benefit from its extraordinary material properties, including low mechanical dissipation and a wide optical transparency window. Diamond is also rich in optically active defects, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers, which behave as atom-like systems in the solid state. Predictions and observations of coherent coupling of the NV electronic spin to phonons via lattice strain has motivated the development of diamond nanomechanical devices aimed at realization of hybrid quantum systems, in which phonons provide an interface with diamond spins. In this work, we demonstrate diamond optomechanical crystals (OMCs), a device platform to enable such applications, wherein the co-localization of ~ 200 THz photons and few to 10 GHz phonons in a quasi-periodic diamond nanostructure leads to coupling of an optical cavity field to a mechanical mode via radiation pressure. In contrast to other material systems, diamond OMCs operating in the resolved-sideband regime possess large intracavity photon capacity (> 10$^5$) and sufficient optomechanical coupling rates to reach a cooperativity of ~ 20 at room temperature, allowing for the observation of optomechanically induced transparency and the realization of large amplitude optomechanical self-oscillations

Diamond optomechanical crystals

Cavity-optomechanical systems realized in single-crystal diamond are poised to benefit from its extraordinary material properties, including low mechanical dissipation and wide optical transparency window. Diamond is also rich in optically active defects, such as the nitrogen-vacancy (NV) center, which behave as atom-like systems in the solid state. Predictions and observations of coherent coupling of the NV electronic spin to phonons via lattice strain has motivated the development of diamond nanomechanical devices aimed at realization of hybrid quantum systems, in which phonons provide an interface with diamond spins. In this work, we demonstrate a device platform to enable such applications: diamond optomechanical crystals (OMCs), where the co-localization of ~ 200 THz photons and ~ 6 GHz phonons in a quasi-periodic diamond nanostructure leads to coupling of an optical cavity field to a mechanical mode via the radiation pressure of light. In contrast to other material systems, diamond OMCs operating in the resolved sideband regime possess large intracavity photon capacity (> 105) and sufficient optomechanical coupling rate to exceed a cooperativity of ~ 1 at room temperature and realize large amplitude optomechanical self-oscillations. Strain-mediated coupling of the high frequency (~ GHz) mechanical modes of these devices to the electronic and spin levels of diamond color centers has the potential to reach the strong spin-phonon coupling regime, and enable a coherent interface with diamond qubits for applications in quantum-nonlinear optomechanics.Physic

Quantum interference of electromechanically stabilized emitters in nanophotonic devices

Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics. Nanophotonic devices coupled to solid-state quantum emitters represent a promising approach towards realization of these goals, as they combine strong light-matter interaction and high photon collection efficiencies. However, the scalability of these approaches is limited by the frequency mismatch between solid-state emitters and the instability of their optical transitions. Here we present a nano-electromechanical platform for stabilization and tuning of optical transitions of silicon-vacancy (SiV) color centers in diamond nanophotonic devices by dynamically controlling their strain environments. This strain-based tuning scheme has sufficient range and bandwidth to alleviate the spectral mismatch between individual SiV centers. Using strain, we ensure overlap between color center optical transitions and observe an entangled superradiant state by measuring correlations of photons collected from the diamond waveguide. This platform for tuning spectrally stable color centers in nanophotonic waveguides and resonators constitutes an important step towards a scalable quantum network

Strain engineering of the silicon-vacancy center in diamond

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator