38 research outputs found
Stability of spin droplets in realistic quantum Hall devices
We study the formation and characteristics of "spin droplets",i.e., compact
spin-polarized configurations in the highest occupied Landau level, in an
etched quantum Hall device at filling factors . The confining
potential for electrons is obtained with self-consistent electrostatic
calculations on a GaAs/AlGaAs heterostructure with experimental system
parameters. Real-space spin-density-functional calculations for electrons
confined in the obtained potential show the appearance of stable spin droplets
at . The qualitative features of the spin droplet are similar to
those in idealized (parabolic) quantum-dot systems. The universal stability of
the state against geometric deformations underline the applicability of spin
droplets in, e.g., spin-transport through quantum point contacts.Comment: 11 pages, 6 figure
Formation of spin droplet at nu=5/2 in an asymmetric quantum dot under quantum Hall conditions
In this work, a quantum dot that is defined asymmetrically by electrostatic means induced on a GaAs/AlGaAs heterostructure is investigated to unravel the effect of geometric constraints on the formation of spin droplets under quantized Hall conditions. The incompressibility of the excited nu = 5/2 state is explored by solving the Schr "odinger equation within spin density functional theory, where the confinement potential is obtained self-consistently utilizing the Thomas-Fermi approximation. Our numerical investigations show that the spatial distribution of the nu = 2 incompressible strips and electron occupation in the second lowest Landau level considerably differ from the results of the laterally symmetric quantum dots. Our findings yield two important consequences: first, the incompressibility of the intriguing nu= 5/2 state is strongly affected by the asymmetry, and second, since the Aharonov-Bohm interference patterns depend on the velocity of the particles, asymmetry yields an additional parameter to adjust the oscillation period, which imposes a boundary condition dependency in observing quasiparticle phases
Formation of spin droplet at ν
In this work, a quantum dot that is defined asymmetrically by electrostatic
means induced on a GaAs/AlGaAs heterostructure is investigated to unravel the
effect of geometric constrains on the formation of spin droplets under
quantised Hall conditions. The incompressibility of exciting nu = 5/2 state is
explored by solving the Schrodinger equation within spin density functional
theory, where the confinement potential is obtained self-consistently utilising
the Thomas-Fermi approximation. Our numerical investigations show that the
spatial distribution of the nu = 2 incompressible strips and electron
occupation in the second lowest Landau level considerably differ from the
results of the laterally symmetric quantum dots. Our findings yield two
important consequences, first the incompressibility of the intriguing nu = 5/2
state is strongly affected by the asymmetry, and second, since the
Aharonov-Bohm interference patterns depend on the velocity of the particles,
asymmetry yields an additional parameter to adjust the oscillation period,
which imposes a boundary condition dependency in observing quasi-particle
phases.Comment: 7 pages, 8 figure
Screening theory based modeling of the quantum Hall based quasi-particle interferometers, defined at quantum dots
In this work, we investigate the spatial distributions and the widths of the incompressible strips, i.e. the edge-states. The incompressible strips that correspond to nu = 1,2 and 1/3 filling factors are examined in the presence of a strong perpendicular magnetic field. We present a microscopic picture of the fractional quantum Hall effect based interferometers, within a phenomenological model. We adopt Laughlin quasi-particle properties in our calculation scheme. In the fractional regime, the partially occupied lowest Landau level is assumed to form an energy gap due to strong correlations. Essentially by including this energy gap to our energy spectrum, we obtain the properties of the incompressible strips at nu = 1/3. The interference conditions are investigated as a function of the gate voltage and steepness of the confinement potential, together with the strength of the applied magnetic field. (c) 2012 Elsevier B.V. All rights reserved