Новый популизм в новой Европе: венгерский и польский примеры в научном дискурсе

The article analyzes the phenomenon of new populism in Central and Eastern Europe, taking as an example such countries as Hungary and Poland. The object of research is scientific discourse, and the subject is its segment, directly or indirectly related to populism in CEE. The main problems, aspects and positions that exist in the scientific community on the topic of populism are identified. This article explores the questions of whether populists in CEE countries are bearers of the potential for alternativeism.The piece also raises the problem of the model of the world order and the possibility of projecting an Eastern European alternative development-Most attention is paid to the answers to these research questions. In addition, the article outlines possible prospects for the development of the scientific discourse of populism, including in a comparative political key.В статье рассматривается феномен нового популизма в Центральной и Восточной Европе (ЦВЕ) на примере таких стран-членов Вишеградской группы как Венгрия и Польша. В качестве объекта исследования выступает научный дискурс, а предметом является его сегмент, прямо или косвенно связанный с популизмом в ЦВЕ. Выявляются основные проблемы, аспекты и позиции, существующие в научном сообществе по тематике популизма. В статье исследуются вопросы, относительно того, являются ли популисты стран ЦВЕ носителями потенциала альтернативности. Также в материале поднимается проблема о модели миропорядка и возможности проектирования восточноевропейской альтернативы развития. Ответам на эти исследовательские вопросы уделяется наибольшее внимание. Кроме того, в статье намечаются возможные перспективы развития научного дискурса популизма, в том числе в сравнительно-политическом ключе

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility

2D electrons and 2D plasmons in AlGaN/GaN nanostructure under highly non-equilibrium conditions

We report on studies of electrically excited non-equilibrium 2D electrons and 2D plasmons in an AlGaN/GaN nanostructure. Optical access to 2D plasmons is provided by means of a metal grating fabricated at the nanostructure surface, while the properties of 2D electrons are examined in the samples without metal grating. The paper focuses on the creation of highly non-equilibrium conditions when the effective temperature of 2D electrons is much higher than the crystal lattice temperature. Such conditions are realized by applying short electrical pulses with a low repetition frequency. A method has been developed for independently determining the temperature of hot electrons and the temperature of the crystal lattice under an applied electric field. It has been shown that under highly non-equilibrium conditions the spectral density of terahertz electroluminescence of 2D plasmons can significantly exceed that of 2D electrons at a certain frequency.Peer reviewe

Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Terahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I- V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.Peer reviewe