2 research outputs found
Detecting Resistive-Opens in RRAM using Programmable DfT Scheme
Resistive Random Access Memory (RRAM)
is one of the emerging memory devices that possesses a
combined attribute of SRAM, DRAM and flash. How-
ever, as the technology and fabrication process of such a
promising memory devices are still immature, RRAM is
expected to be impacted by process-variation faults such
as resistive-open. This kind of defect is difficult to be detected using existing Design-for-Testability (DfT) scheme,
which is developed based on a single critical defect value.
This paper presents a new DfT scheme with the capability
to identify faulty RRAM cells impacted by resistive-opens
due to process variation. The new DfT scheme, referred
to as Programmable Low Write Voltage (PLWV), is based
on multiple voltage levels that can be programmed to suit
the target fault coverage. The concept, design methodology and circuit are described. SPICE simulation results
suggest that the proposed PLWV scheme can detect faults
with different defect values at minimal circuit modification
A New Test Scheme for Process Variation-Induced Faults in Resistive RAMs
Resistive random access memory (RRAM) is vying to be one of the main universal memories for computing systems. Nonetheless, due to infancy knowledge and technology to fabrication RRAM, this emerging memory technology is expected to be impacted by processvariation-induced faults. Due to their varying behavior, processvariation-inducedfaults are problematic to be detected using existing test approach that is solely based on the March test concept. This manuscript presents a new test scheme based on the combination of the Design-for-Testability (DfT) concept with the March test concept to detect such faults. Unlike the conventional DfT that asserts a single, fixed write voltage during testing, the proposed test scheme asserts multiple voltage levels that can be digitally adjusted. Simulation results using Verilog-AMS and HSPICE tools show that the process variation-induced faults can be detected with minor circuit modification. In addition, as the proposed test approaches are programmable, the proposed test scheme alleviates the redesign phase and in turn accelerates time-to-market