Spatial distribution of local tunneling conductivity due to interference and Coulomb interaction effects for deep and shallow impurities on semiconductor surfaces

Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-{I} model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and on-site Coulomb repulsion of localized electrons strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS).Comment: 5 pages, 3 figure

All-electrical control of single ion spins in a semiconductor

We propose a method for all-electrical initialization, control and readout of the spin of single ions substituted into a semiconductor. Mn ions in GaAs form a natural example. In the ion's ground state the Mn core spin magnetic moment locks antiparallel to the spin and orbital magnetic moment of a bound valence hole from the GaAs host. Direct electrical manipulation of the ion spin is possible because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling two or more ion spins can be achieved using electrical gates to control the size of the valence hole wave function near the semiconductor surface. This proposal for coherent manipulation of individual ionic spins and controlled coupling of ionic spins via electrical gates alone may find applications in extremely high density information storage and in scalable coherent or quantum information processing.Comment: 5 pages, 3 figure

The influence of localized states charging on 1/f^{\alpha} tunneling current noise spectrum

We report the results of theoretical investigations of low frequency tunneling current noise spectra component (1/f^{\alpha}). Localized states of individual impurity atoms play the key role in low frequency tunneling current noise formation. It is found that switching "on" and "off" of Coulomb interaction of conduction electrons with one or two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum 1/f^{\alpha}. Power law exponent in different low frequency ranges depends on the relative values of Coulomb interaction of conduction electrons with different charged impurities.Comment: 7 pages, 5 figure

Tuning of tunneling current noise spectra singularities by localized states charging

We report the results of theoretical investigations of tunneling current noise spectra in a wide range of applied bias voltage. Localized states of individual impurity atoms play an important role in tunneling current noise formation. It was found that switching "on" and "off" of Coulomb interaction of conduction electrons with two charged localized states results in power law singularity of low-frequency tunneling current noise spectrum ($1/f^{\alpha}$) and also results on high frequency component of tunneling current spectra (singular peaks appear).Comment: 7 pages, 4 figure

Scanning tunneling microscopy and spectroscopy at low temperatures of the (110) surface of Te doped GaAs single crystals

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are identified as Te dopant atoms which can be observed down to the fifth subsurface layer. For negative sample voltages, the dopant atoms are surrounded by Friedel charge density oscillations. Spatially resolved spectroscopy above the dopant atoms and above defect free areas of the GaAs (110) surface reveals the presence of conductance peaks inside the semiconductor band gap. The appearance of the peaks can be linked to charges residing on states which are localized within the tunnel junction area. We show that these localized states can be present on the doped GaAs surface as well as at the STM tip apex.Comment: 8 pages, 8 figures, accepted for publication in PR

Coulomb singularity effects in tunnelling spectroscopy of individual impurities

Non-equilibrium Coulomb effects in resonant tunnelling processes through deep impurity states are analyzed. It is shown that Coulomb vertex corrections to the tunnelling transfer amplitude lead to a power-law singularity in current- voltage characteristicsComment: 7 pages, 2 figure

The mechanism of hole carrier generation and the nature of pseudogap- and 60K-phases in YBCO

In the framework of the model assuming the formation of NUC on the pairs of Cu ions in CuO$_{2}$ plane the mechanism of hole carrier generation is considered and the interpretation of pseudogap and 60 K-phases in $YBa_{2}Cu_{3}O_{6+\delta}$. is offered. The calculated dependences of hole concentration in $YBa_{2}Cu_{3}O_{6+\delta}$ on doping $\delta$ and temperature are found to be in a perfect quantitative agreement with experimental data. As follows from the model the pseudogap has superconducting nature and arises at temperature $T^{*}>T_{c\infty}>T_{c}$ in small clusters uniting a number of NUC's due to large fluctuations of NUC occupation. Here $T_{c\infty}$ and $T_{c}$ are the superconducting transition temperatures of infinite and finite clusters of NUC's, correspondingly. The calculated $T^{*}(\delta)$ and $T_{n}(\delta)$ dependences are in accordance with experiment. The area between $T^{*}(\delta)$ and $T_{n}(\delta)$ corresponds to the area of fluctuations where small clusters fluctuate between superconducting and normal states owing to fluctuations of NUC occupation. The results may serve as important arguments in favor of the proposed model of HTSC.Comment: 12 pages, 7 figure