Compensation of Distribution System Voltage using DVR

A dynamic voltage restorer (DVR) is a power-electronic controller that can protect sensitive loads from disturbances in the supply system. In this paper, it is demonstrated that this device can tightly regulate the voltage at the load terminal against imbalance or harmonic in the source side. The behavior of the device is studied through steady-state analysis, and limits to achievable performance are found. This analysis is extended to the study of transient operation where the generation of the reference voltage of the DVR is discussed. Once the reference signals are generated, they are tracked using a switching band scheme. A suitable structure in which the DVR is realized by voltage-source inverters (VSIs) is also discussed. Particular emphasis to the rating of this device is provided. Extensive simulation results are included to illustrate the operating principles of a DVR

Torsional Interaction Studies on a Power System Compensated by SSSC and Fixed Capacitor

In this paper, a static synchronous series compensator (SSSC), along with a fixed capacitor, is used to avoid torsional mode instability in a series compensated transmission system. A 48-step harmonic neutralized inverter is used for the realization of the SSSC. The system under consideration is the IEEE first benchmark model on SSR analysis. The system stability is studied both through eigenvalue analysis and EMTDC/PSCAD simulation studies. It is shown that the combination of the SSSC and the fixed capacitor improves the synchronizing power coefficient. The presence of the fixed capacitor ensures increased damping of small signal oscillations. At higher levels of fixed capacitor compensation, a damping controller is required to stabilize the torsional modes of SSR

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in random resistor network, particularly in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry or carrier mobility, which can be extended to other classes of 2D material-based devices as well

Field-tunable stochasticity in the magnetization reversal of a cylindrical nanomagnet

The nature of magnetization reversal in an isolated cylindrical nanomagnet has been studied employing time-resolved magnetoresistance measurement. We find that the reversal mode is highly stochastic, occurring either by multimode or single-step switching. Intriguingly, the stochasticity was found to depend on the alignment of the driving magnetic field to the long axis of the nanowires, where predominantly multimode switching gives way to single-step switching behavior as the field direction is rotated from parallel to transverse with respect to the nanowire axis.Comment: Accepted in Phys. Rev.