Two-photon spin injection in semiconductors

A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in (001)-oriented GaAs reveal an initial degree of spin polarization of 49% for both one- and two-photon spin injection at wavelengths of 775 and 1550 nm, in agreement with theory. The macroscopic symmetry and microscopic theory for two-photon spin injection are reviewed, and the latter is generalized to account for spin-splitting of the bands. The degree of spin polarization of one- and two-photon optical orientation need not be equal, as shown by calculations of spectra for GaAs, InP, GaSb, InSb, and ZnSe using a 14x14 k.p Hamiltonian including remote band effects. By including the higher conduction bands in the calculation, cubic anisotropy and the role of allowed-allowed transitions can be investigated. The allowed-allowed transitions do not conserve angular momentum and can cause a high degree of spin polarization close to the band edge; a value of 78% is calculated in GaSb, but by varying the material parameters it could be as high as 100%. The selection rules for spin injection from allowed-allowed transitions are presented, and interband spin-orbit coupling is found to play an important role.Comment: 12 pages including 7 figure

Nova Laser System at Ultra High Fluence Levels

The Nova experimental facility consists of a ten arm laser system and five experimental stations and was completed in December 1984. Two of these stations are used for inertial confinement fusion (ICF) experiments and the other three are dedicated to doing large aperture (30 to 74 cm) laser experiments. The laser system is deployed in a master oscillator-power amplifier architecture and uses Nd: phosphate glass for the active medium. The fundamental wavelength of the system is 1.05 microns. Frequency converters constructed from potassium dihydrogen phosphate (KDP) crystals are located at the end of each of the ten arms and are used to produce high power frequency doubled (0.53 microns) and tripled (0.35 microns) beams for either ICF or laser experiments. Thus, the Nova laser system can produce high power beams with wavelengths ranging from the infrared to the ultraviolet