Occupation probability of harmonic-oscillator quanta for microscopic cluster-model wave functions

We present a new and simple method of calculating the occupation probability of the number of total harmonic-oscillator quanta for a microscopic cluster-model wave function. Examples of applications are given to the recent calculations including $\alpha+n+n$-model for $^6$He, $\alpha+t+n+n$-model for $^9$Li, and $\alpha+\alpha+n$-model for $^9$Be as well as the classical calculations of $\alpha+p+n$-model for $^6$Li and $\alpha+\alpha+\alpha$-model for $^{12}$C. The analysis is found to be useful for quantifying the amount of excitations across the major shell as well as the degree of clustering. The origin of the antistretching effect is discussed.Comment: 9 page

Ab initio study of the photoabsorption of 4^4He

There are some discrepancies in the low energy data on the photoabsorption cross section of $^4$He. We calculate the cross section with realistic nuclear forces and explicitly correlated Gaussian functions. Final state interactions and two- and three-body decay channels are taken into account. The cross section is evaluated in two methods: With the complex scaling method the total absorption cross section is obtained up to the rest energy of a pion, and with the microscopic $R$-matrix method both cross sections $^4$He($\gamma, p$)$^3$H and $^4$He($\gamma, n$)$^3$He are calculated below 40\,MeV. Both methods give virtually the same result. The cross section rises sharply from the $^3$H+$p$ threshold, reaching a giant resonance peak at 26--27\,MeV. Our calculation reproduces almost all the data above 30\,MeV. We stress the importance of $^3$H+$p$ and $^3$He+$n$ cluster configurations on the cross section as well as the effect of the one-pion exchange potential on the photonuclear sum rule.Comment: 15 pages, 12 figure

Miniaturization of High-Frequency Carrier-Type Thin-Film Magnetic Field Sensor Using Laminated Film

We examined a laminated high-frequency carrier-type thin-film magnetic field sensor that consists of CoNbZr soft magnetic films with Nb nonmagnetic conductive interlayer. The lamination can change domain structure of the sensor and obtain high sensitivity. An impedance change of 6 /spl Omega/ and a gain of 43 k/spl Omega//T was achieved when the length of the laminated sensor was 1 mm. The gain is four times larger than that of a monolayer sensor