Fluctuating charge density waves in a cuprate superconductor

Cuprate materials hosting high-temperature superconductivity (HTS) also exhibit various forms of charge and/or spin ordering whose significance is not fully understood. To date, static charge-density waves (CDWs) have been detected by diffraction probes only at special doping or in an applied external field. However, dynamic CDWs may also be present more broadly and their detection, characterization and relationship with HTS remain open problems. Here, we present a new method, based on ultrafast spectroscopy, to detect the presence and measure the lifetimes of CDW fluctuations in cuprates. In an underdoped La1.9Sr0.1CuO4 film (Tc = 26 K), we observe collective excitations of CDW that persist up to 100 K. This dynamic CDW fluctuates with a characteristic lifetime of 2 ps at T = 5 K which decreases to 0.5 ps at T = 100 K. In contrast, in an optimally doped La1.84Sr0.16CuO4 film (Tc = 38.5 K), we detect no signatures of fluctuating CDWs at any temperature, favoring the competition scenario. This work forges a path for studying fluctuating order parameters in various superconductors and other materials.Comment: 16 pages, 4 figures, accepted to Nature Material

Electron pairing in the pseudogap state revealed by shot noise in copper oxide junctions

In the quest to understand high-temperature superconductivity in copper oxides, debate has been focused on the pseudogap—a partial energy gap that opens over portions of the Fermi surface in the ‘normal’ state above the bulk critical temperature. The pseudogap has been attributed to precursor superconductivity, to the existence of preformed pairs and to competing orders such as charge-density waves. A direct determination of the charge of carriers as a function of temperature and bias could help resolve among these alternatives. Here we report measurements of the shot noise of tunnelling current in high-quality La_(2−x)Sr)xCuO)4/La)2CuO)4/La_(2−x)Sr)xCuO)4 (LSCO/LCO/LSCO) heterostructures fabricated using atomic layer-by-layer molecular beam epitaxy at several doping levels. The data delineate three distinct regions in the bias voltage–temperature space. Well outside the superconducting gap region, the shot noise agrees quantitatively with independent tunnelling of individual charge carriers. Deep within the superconducting gap, shot noise is greatly enhanced, reminiscent of multiple Andreev reflections. Above the critical temperature and extending to biases much larger than the superconducting gap, there is a broad region in which the noise substantially exceeds theoretical expectations for single-charge tunnelling, indicating pairing of charge carriers. These pairs are detectable deep into the pseudogap region of temperature and bias. The presence of these pairs constrains current models of the pseudogap and broken symmetry states, while phase fluctuations limit the domain of superconductivity

Electron pairing in the pseudogap state revealed by shot noise in copper oxide junctions

In the quest to understand high-temperature superconductivity in copper oxides, debate has been focused on the pseudogap—a partial energy gap that opens over portions of the Fermi surface in the ‘normal’ state above the bulk critical temperature. The pseudogap has been attributed to precursor superconductivity, to the existence of preformed pairs and to competing orders such as charge-density waves. A direct determination of the charge of carriers as a function of temperature and bias could help resolve among these alternatives. Here we report measurements of the shot noise of tunnelling current in high-quality La_(2−x)Sr)xCuO)4/La)2CuO)4/La_(2−x)Sr)xCuO)4 (LSCO/LCO/LSCO) heterostructures fabricated using atomic layer-by-layer molecular beam epitaxy at several doping levels. The data delineate three distinct regions in the bias voltage–temperature space. Well outside the superconducting gap region, the shot noise agrees quantitatively with independent tunnelling of individual charge carriers. Deep within the superconducting gap, shot noise is greatly enhanced, reminiscent of multiple Andreev reflections. Above the critical temperature and extending to biases much larger than the superconducting gap, there is a broad region in which the noise substantially exceeds theoretical expectations for single-charge tunnelling, indicating pairing of charge carriers. These pairs are detectable deep into the pseudogap region of temperature and bias. The presence of these pairs constrains current models of the pseudogap and broken symmetry states, while phase fluctuations limit the domain of superconductivity

Track E Implementation Science, Health Systems and Economics

Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/138412/1/jia218443.pd

Is Nematicity in Cuprates Real?

In La2-xSrxCuO4 (LSCO), a prototype high-temperature superconductor (HTS) cuprate, a nonzero transverse voltage is observed in zero magnetic fields. This is important since it points to the breaking of the rotational symmetry in the electron fluid, the so-called electronic nematicity, presumably intrinsic to LSCO (and other cuprates). An alternative explanation is that it arises from extrinsic factors such as the film’s inhomogeneity or some experimental artifacts. We confront this hypothesis with published and new experimental data, focusing on the most direct and sensitive probe—the angle-resolved measurements of transverse resistivity (ARTR). The aggregate experimental evidence overwhelmingly refutes the extrinsic scenarios and points to an exciting new effect—intrinsic electronic nematicity

Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates

Here, we show that in several p-type cuprates, the superconductor-to-insulator transition (SIT) occurs at the critical sheet resistance approximately equal to the quantum resistance of pairs, RQ=h/4$e^{2}$=6.5 kΩ. In a relatively broad range of temperatures and doping levels near the quantum critical point, the sheet resistance shows universal behavior and scaling characteristic of two-dimensional quantum phase transition

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms