Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first "strained layer." The threading dislocation density in the top layer is below 106/cm2 and strain is relaxed at the substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstrates

ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES

The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the comparison of these experimental strain contrasts with simulated profiles makes it possible to assess the elastic relaxation of the islands