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Radiation Emission by Electrons Channeling in Bent Silicon Crystals
Results of numerical simulations of electron channeling and emission spectra
are reported for straight and uniformly bent silicon crystal. The projectile
trajectories are computed using the newly developed module [1] of the MBN
Explorer package [2,3]. The electron channeling along Si(110) crystallographic
planes is studied for the projectile energy 855 MeV.Comment: 9 pages, 7 figures; submitted to European Physical Journal D. arXiv
admin note: text overlap with arXiv:1307.678
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