Performance of the multiband imaging photometer for SIRTF

We describe the test approaches and results for the Multiband Imaging Photometer for SIRTF. To verify the performance within a `faster, better, cheaper' budget required innovations in the test plan, such as heavy reliance on measurements with optical photons to determine instrument alignment, and use of an integrating sphere rather than a telescope to feed the completed instrument at its operating temperature. The tests of the completed instrument were conducted in a cryostat of unique design that allowed us to achieve the ultra-low background levels the instrument will encounter in space. We controlled the instrument through simulators of the mission operations control system and the SIRTF spacecraft electronics, and used cabling virtually identical to that which will be used in SIRTF. This realistic environment led to confidence in the ultimate operability of the instrument. The test philosophy allowed complete verification of the instrument performance and showed it to be similar to pre-integration predictions and to meet the instrument requirements

Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hg 1-x Cd x Te

Recent advances in the growth of cadmium mercury telluride (Hg1-xCdxTe or MCT) by metal organic vapor phase epitaxy (MOVPE) allow the fabrication of advanced device structures where both the alloy composition x and the doping concentration can be accurately controlled throughout the epitaxial layer. For p-type doping using arsenic, the acceptor concentration can be varied from 5 X 1015 cm-3 to 4 X 1017 cm-3 and for n-type doping using iodine, the donor concentration can be varied from 1 X 1015 cm-3 to 2 X 1017 cm-3. A number of diode arrays have been fabricated in this material and their properties assessed at 77 K, 195 K and 295 K. It has been found that the diffusion currents are at least ten times lower than in homojunctions. In addition, the devices exhibit negative resistance at temperatures above 190 K due to auger suppression. The successful demonstration of auger suppression in these structures has greatly improved the diode leakage currents at room temperature and will enable the development of new devices such as a room temperature laser detector

Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates

We have demonstrated the successful growth of mercury cadmium telluride (MCT) infrared detector material on silicon substrates. Growth on silicon increases the maximum achievable array size, reduces manufacturing costs, and paves the way for infrared detector growth directly on multiplexing circuits. In addition, the thermal match with multiplexing circuits eliminates the requirement for complex thinning procedures. Since the crystal lattice of MCT is not matched to that of silicon, an intermediate buffer layer is required. We have developed a buffer layer technique that is compatible with MCT grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Long-wavelength heterostructure device designs were grown using this technique. Test devices and 128x128 focal plane arrays were fabricated by wet etching mesa structures and passivating the mesa side-walls with a thin layer of CdTe. An indium flip-chip technique was used to form interconnects between the detector material and test or multiplexing circuit. At 77K, 50x50μm test devices with a 10.2μm cut off wavelength have been measured with R0A~1x103Ohm cm2 at zero bias and R.A~1x104Ohm cm2 at 0.1V reverse bias. Arrays from this material have been demonstrated with operabilities up to 99.7%

Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes

Infrared avalanche diodes are key components in diverse applications such as eye-safe burst illumination imaging systems and quantum cryptography systems operating at telecommunications fiber wavelengths. HgCdTe is a mature infrared detector material tunable over all infrared wavelengths longer than ~850nm. HgCdTe has fundamental properties conducive to producing excellent detectors with low noise gain. The huge asymmetry between the conduction and valence bands in HgCdTe is a necessary starting point for producing impact ionization with low excess noise factor. Other factors in the band structure are also favorable. The low bandgap necessitates at least multi-stage thermoelectric cooling. Mesa diode structures with electron initiated multiplication have been designed for gains of up to around 100 at temperatures at or above 80K. Backside illuminated, flip-chip, test diode arrays have been fabricated by MOVPE using a process identical to that required for producing large imaging arrays. Test diode results have been obtained with the following parameters characterized, dark current vs. voltage and temperature, gain vs. voltage, and spectral response as a function of wavelength and bias. The effect of changing active region cadmium composition and active region doping is presented along with an assessment of some of the trade-offs between dark leakage current, gain, operating voltage and temperature of operation

Overlapping features of therapy-related and de novo NPM1-mutated AML

NPM1-mutated AML represents a WHO leukemia entity with unique pathological and clinical features. Little is known about the characteristics of "therapy-related" NPM1-mutated AML. We compared the genetics, transcriptional profile and clinical outcome of therapy-related NPM1-mutated AML (t-NPM1 AML), de-novo NPM1-mutated AML (dn-NPM1 AML) and therapy-related AML with wild-type NPM1 (t-AML). A normal karyotype was more frequent in t-NPM1 AML (n=78/96 cases, 88%) and dn-NPM1 (n=1986/2394,88%) than in t-AML (n=103/390,28%; p 0.1), but more frequently than t-AML (n=162; 14% and 10%; p-values <0.001). TP53 and PPM1D, typically mutated in t-AML, were consistently wild-type in t-NPM1 AML (97% and 96%). t-NPM1 and dn-NPM1 AML were transcriptionally similar, displaying upregulation of HOX genes and down-regulation of CD133 and CD34. With a median follow-up of 62 months, 3-year overall survival (OS) for t-NPM1 AML (n=96), dn-NPM1 AML (n=2394) and t-AML (n=390) was 54%, 60% and 31%. In multivariable analysis OS was similar for the two NPM1-mutated groups (HR 0.9, 95%CI 0.65-1.25, p=0.45) but better in t-NPM1 AML than t-AML (HR 1.86, 95%CI 1.30-2.68, p<0.001). Relapse-free survival did not differ between t-NPM1 and dn-NPM1 AML (HR 1.02, 95%CI 0.72-1.467, p=0.90) but was significantly higher in t-NPM1 AML than t-AML (HR 1.77, 95%CI 1.19-2.64, p=0.0045).t-NPM1 and dn-NPM1 AML have similar clinical, genomic and transcriptomic features, suggesting that they should be classified as a single disease entit

Overlapping features of therapy-related and de novoNPM1-mutated AML

: NPM1-mutated AML represents a WHO leukemia entity with unique pathological and clinical features. Little is known about the characteristics of "therapy-related" NPM1-mutated AML. We compared the genetics, transcriptional profile and clinical outcome of therapy-related NPM1-mutated AML (t-NPM1 AML), de-novo NPM1-mutated AML (dn-NPM1 AML) and therapy-related AML with wild-type NPM1 (t-AML). A normal karyotype was more frequent in t-NPM1 AML (n=78/96 cases, 88%) and dn-NPM1 (n=1986/2394,88%) than in t-AML (n=103/390,28%; p 0.1), but more frequently than t-AML (n=162; 14% and 10%; p-values <0.001). TP53 and PPM1D, typically mutated in t-AML, were consistently wild-type in t-NPM1 AML (97% and 96%). t-NPM1 and dn-NPM1 AML were transcriptionally similar, displaying upregulation of HOX genes and down-regulation of CD133 and CD34. With a median follow-up of 62 months, 3-year overall survival (OS) for t-NPM1 AML (n=96), dn-NPM1 AML (n=2394) and t-AML (n=390) was 54%, 60% and 31%. In multivariable analysis OS was similar for the two NPM1-mutated groups (HR 0.9, 95%CI 0.65-1.25, p=0.45) but better in t-NPM1 AML than t-AML (HR 1.86, 95%CI 1.30-2.68, p<0.001). Relapse-free survival did not differ between t-NPM1 and dn-NPM1 AML (HR 1.02, 95%CI 0.72-1.467, p=0.90) but was significantly higher in t-NPM1 AML than t-AML (HR 1.77, 95%CI 1.19-2.64, p=0.0045).t-NPM1 and dn-NPM1 AML have similar clinical, genomic and transcriptomic features, suggesting that they should be classified as a single disease entity